An object of the present invention is to provide a method of producing an Ag-ZnO electric contact material which can uniformly disperse ZnO micrograins in Ag; which maintains low contact resistance; which exhibits enhanced welding resistance and wear resistance; and which is suitable in view of production costs. The method of producing an Ag-ZnO electrical contact material comprises casting Ag and...

The present invention provides an improved planarization or polishing apparatus for chemical mechanical planarization and other types of polishing such as metal polishing and optical polishing. In an exemplary embodiment, an apparatus for polishing an object comprises a pad having a polishing surface to be placed on the target surface of the object to be polished. A pad drive member is connected t...

A rubber laminate produced by the vulcanization bonding between a rubber layer (1) comprising the following rubber composition (A) and a rubber layer (2) comprising another rubber composition (B). Rubber composition (A): a rubber composition comprising 100 parts by weight of a rubber component comprising 5 to 95 wt.% of a peroxide-cross-linkable fluororubber containing 45 to 88 mole % units derive...

The wet-responsive fiber of the invention has a monofilament formed from a resin composition characteristically comprising a resin having an anionic group, a resin having a cationic group, and optionally, a resin as a base; the fiber can be produced by melting, kneading, and then spinning a resin composition comprising a resin having an anionic group, a resin having a cationic group, and optionall...

In a hydrocarbon well, a speed measurement is performed at substantially the same level as a determination of the proportions of the phases of the fluid flowing along the well in at least one local region. To this end, local sensors (48) are placed on the hinged arms (22) of a centering device, and a speed-measuring spinner (20) is placed between the arms (22).

Capacitor of semiconductor device and its manufacturing method are provided. A high dielectric constant TaON film is used to make capacitors of high-density memory device. The manufacturing method comprises the following steps: (1) form a meta-stable silicon (MPS) 35 bottom electrode on the provided semiconductor substrate 21; (2) thermally dope the bottom electrode in 550 to 660 degrees of centig...

A semiconductor apparatus is provided by the present invention. It can prevent the reduction of the capacitor insulating film that contains insulated metallic oxide under the condition that the high temperature oxygen annealing cannot be applied after the interconnection layer being formed. Form capacitor 11 on a semiconductor substrate 1. The capacitor is composed of bottom electrode 8, capacitor...

A shoe stud 1, 101 for a sports shoe has a ground-engaging part and a multi-start threaded spigot 5, 105 for engagement in a complementary socket 37, 137 on a receptacle 2, 102 secured in the shoe sole or heel. The stud and receptacle also have a locking device which interengages when the spigot is fully inserted into the socket, to resist unscrewing. In order to ensure that the stud takes up a pr...

A tablet for producing a semiconductor device with substantially no bowing, comprising an epoxy resin composition comprising an epoxy resin and a curing agent, wherein the tablet has the characteristic of an amount reduced by heating being less than 0.05% by weight; a wafer with a resin layer and a semiconductor device produced by using the tablet; and a process for producing the wafer and the sem...

A packaged integrated circuit, for use in a radio frequency apparatus, the packaged integrated circuit comprises one or more radio frequency components that are included in an integrated circuit die. The integrated circuit die is associated with a radio frequency antenna. The radio frequency antenna is also included in the packaged integrated circuit but is excluded from the integrated circuit die...

The purpose of the present invention is to provide a miniaturized surface mounting type semiconductor electronic circuit unit. Circuit elements containing capacitors C1-C7, resistors R1-R3, and inductance elements L1-L3 are formed on an alumina substrate 1 in the form of thin films. A bare semiconductor chip of a diode D1 and a transistor Tr1 is wire-bonded. Each capacitor C1-C7 is partially forme...

The major component of radio transceiver can be separately bonded with 3 or 4 types of modules of intermediate substrate (wiring substrate) between terminals where the terminal pitch of semiconductor component bonded on the major side extends to the external terminal pitch of inner side. Bond: the received amplified radio frequency signal of the first module is demodulated as baseband frequency si...

The object of this invention is to provide an alloy particle, characterized in that it contains no lead, has a plurality of melting points including an initial minimum melting point (a) and an maximum melting point, has the initial minimum melting point (a) al least in a surface portion, and exhibits an elevated minimum melting point (a') higher than the initial minimum melting point (a) after it ...

A manufacturing method of the passivation metal on the surface of integrated circuit is disclosed, which provides an integrated circuit constitution comprising a substrate and more than one chip on it, a chip capable of being coupled to the substrate by plural ways such as wire-bonding or flip-chip, and an encapsulant to be at least passivated on the chip and the adjacent substrate. A metal spray ...

A conjugate between a target-seeking moiety and a modified superantigen, characterized in that the superantigen is a wild-type superantigen (SA I) in which an amino acid residue in a superantigen region (region I) determining binding to TCR, preferably TCRV β, and T cell activation have been replaced by another amino acid residue while retaining the ability to activate a subset of T cells. In a pr...

The present invention relates to a semiconductor memory device which mainly relates to an effective relief of Y-system bad part of interconnection-type DRAM technology formed by allocating dynamic memory cells at the interconnections of word lines and bit lines. In a bit-line direction, a plurality of memory mats are arranged including a plurality of memory cells respectively coupled to bit lines ...

To decrease the number of layers while keeping or improving the performance of an EL element, so that the production cost is reduced. Cathodes (106, 107), a light emitting layer (108), an anode (109), and a passivation film (110) are formed on pixel electrodes (104, 105). Thereafter, the vicinity of the interface between the light emitting layer (108) and the anode (109) are doped with a halogen e...

The purpose of the present invention is the shorten the distance between the roll-out-axis and the winding axis in the slitter, so as the reduce the size of the machine, and to be able to greatly reduce the cost. To roll out the web from the roll-out-axis, and to rewind it as it is to the winding axis, or to cut the web into a plurality of webs in the longitudinal direction, and to wind them, mutu...

The present invention proposes a kind of voltage peak detector that is composed of a differential amplifier, a current mirror and a capacitor. Both input terminals of the differential amplifier receive input voltage signal and output voltage feedback signal of the detector, respectively, and provide appropriate charging current for the current mirror to obtain peak value of the input voltage wavef...

The present invention discloses an electrostatic chucking device having a laminated structure which is formed by sequentially laminating a first insulation layer, an electrode layer and a second insulation layer on a metal substrate, wherein the first insulation layer and the second insulation layer are constituted of polyimide films, and at least the adhesion between the metal substrate and the f...