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Patent
number
Title of the invention and abstract piece Date of publication of the patent
1 TWI319426B
COMPOSITIONS AND PROCESSES

An ink-jet printing process comprising the steps (a) and (b) in any order or simultaneously: (a) applying an ink to a substrate by means of an ink-jet printer to form an image on a substrate; and (b) applying to the substrate a fixing composition comprising a liquid medium and a polymer containing a plurality of monoguanide and/or biguanide groups by means of an ink jet printer; characterised in t...

11.01.2010
2 TWI319427B
RESIN COMPOSITION, OPTICAL FILTER AND PLASMA DISPLAY

A resin composition which can enhance the heat resistance and the humidity resistance of a dye possessing the maximum absorption at wavelengths in the range of 380-780 nm is provided. It is obtained by polymerizing a monomer mixture containing 5-100 wt. % of a monomer represented by the formula: CH2-CR-COOX (wherein R denotes a hydrogen atom or a methyl group and X denotes a hydrocarbon...

11.01.2010
3 TWI319428B
ADHESIVE FOR INSULATING FILM

The main composition of an adhesive for an insulating film includes: 100 phr epoxy, wherein each molecule of epoxy have at least two epoxide functional group; 0.1-50 phr PVB; 0.5-50 phr phenolic resin; 0.05-20 phr benzoxazine resin; 0.5-250 phr filler; 0.01-30 phr adhesion agent; 10-150 phr polyamide resin; and 10-250 phr solvent. The present adhesive has a high Tg temperature, a low coefficient o...

11.01.2010
4 TWI319429B
ADHESIVE TAPE FOR LIQUID CRYSTAL DISPLAY MODULE COMBINING LIGHT REFLECTIVITY AND LIGHT SHIELDING

An adhesive tape (a) which combines light reflectivity and light shielding characteristics, which is used for bonding between an LCD panel and a backlight case of an LCD module; (b) and which comprises a backing formed by laminating a light reflective layer and a light shielding layer, and an adhesive layer provided on at least one surface of the backing; (c) wherein the light reflective layer is ...

11.01.2010
5 TWI319430B
LIQUID-CRYSTALLINE MEDIUM

Fluorinated pyran liquid crystalline compounds are new. Fluorinated pyran liquid crystalline compounds (I) of formula (1) are new. Ra = H, 1-12C alkyl optionally monosubstituted by CN or CF3 or at least monohalogenated and optionally having CH2 groups replaced by -O-, -S-, 1,4-cyclobutyl, -CHCH-, -CC-, -CO-, -CO-O- or -O-CO-O- such that O atoms are not directly bonded to each other; A, B = f...

11.01.2010
6 TWI319431B
LIQUID-CRYSTALLINE MEDIUM

Liquid crystalline medium (A) comprises at least one difluoro-dibenzofuran compound (I). Liquid crystalline medium (A), based on a mixture of polar compounds, comprises at least one dibenzofuran compound of formula (I). R11>, R12>H, 1-15C alkyl or alkenyl (optionally substituted by CN, CF3 or halo), where the CH2 group is substituted by -cyclobutane- -Ctriple boundC, -CF2O-, -OCF2-, -OC-O- or -O-C...

11.01.2010
7 TWI319432B
CENTRALLY CONTROLLED COKE OVEN VENTILATION SYSTEM FOR PRIMARY AND SECONDARY AIR

This invention relates to a ventilation device for non-recovery coke ovens, said ventilation device consisting of at least one vent port extending through the wall or built-in internals, e.g. a coke oven door, and connecting the oven interior with the outer atmosphere surrounding said oven and wherein said vent port can be closed entirely or partly by means of a locking element. Two locking elemen...

11.01.2010
8 TWI319433B
No name
11.01.2010
9 TWI319434B
No name
11.01.2010
10 TWI319435B
No name
11.01.2010
11 TWI319436B
METHOD OF DETECTING ACID-FAST BACTERIA USING RIBOSOMAL RNA AS TARGET

A method of detecting a specific acid-fast bacterium, wherein primers having nucleotide sequences homologous or complementary to the specific regions in the rRNAs of the specific acid-fast bacterium are used to specifically amplify only the rRNAs of the specific acid-fast bacterium.

11.01.2010
12 TWI319437B
No name

A high-strength cold-rolled steel sheet providing a product with a good surface condition after press forming, having excellent bake hardenability and anti room temperature aging property, and having a dual phase structure with a tensile strength of at least 340 MPa is provided. A high-strength cold-rolled steel sheet has a structure comprising a main phase which is a ferrite and a secondary phase...

11.01.2010
13 TWI319438B
No name

Provided is a sputtering target having zinc sulfide and indium oxide, zinc oxide and oxide composed of another trivalent positive element A as its primary components, wherein the ratio of sulfur in relation to the total components is 5 to 30wt%, the (111) peak strength I1 of cubic crystal ZnS and the (100) peak strength 12 of hexagonal ZnS measured by XRD coexist, and I1 > I12 is satisfied. The pr...

11.01.2010
14 TWI319439B
No name

An object of the present invention is to provide a high-purity Ru alloy target for sputtering and its manufacturing method, which are capable of reducing harmful substances as much as possible, refining the crystal grains as much as possible so as to make the film thickness distribution during deposition to be uniform, and preventing deterioration in adhesiveness with an Si substrate, and which ar...

11.01.2010
15 TWI319440B
METHOD OF FORMING A INDICATOR

A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure. Each detector includes an enclosure which may be made by forming a plural...

11.01.2010
16 TWI319441B
HIGHLY IONIZED PVD WITH MOVING MAGNETIC FIELD ENVELOPE FOR UNIFORM COVERAGE OF FEATURE STRUCTURE AND WAFER

This invention relates to ionized PVD processing of semiconductor wafers and provides conditions for highly uniform deposition-etch process sequence and coverage capabilities of high aspect ratio (HAR) features within a single processing chamber. A plasma is generated and maintained by an inductively coupled plasma (ICP) source. A deposition process step is performed in which metal vapor is produc...

11.01.2010
17 TWI319442B
METHOD OF DEPOSITING THIN LAYER USING ATOMIC LAYER DEPOSITION

Provided is a method of depositing a thin layer using a plasma atomic layer deposition (ALD) process. The method includes feeding one of an organic compound source containing metal atoms and an inorganic compound source containing metal atoms into a chamber in which a wafer is loaded; purging the source from the chamber; feeding a first reactant into the chamber; purging an unreacted portion of th...

11.01.2010
18 TWI319443B
No name
11.01.2010
19 TWI319444B
VORRICHTUNG UND VERFAHREN ZUR SCHMELZTAUCHBESCHICHTUNG EINES METALLSTANGES

The invention relates to a device for hot-dip coating a metal strand (1), especially a steel strip, in which the metal strand (1) is vertically guided through a container (3) accommodating the molten coating metal (2) and through a guide channel (4) disposed upstream thereof. The inventive device comprises at least two inductors (5) disposed at both sides of the metal strand (1) in the area of the...

11.01.2010
20 TWI319445B
No name

The invention provides a method where in electrolytic treatment for a fastener chain, a ball chain or the like, the surface of the member to be treated can be uniformly and efficiently subjected to electrolytic treatment at a low cost, and to provide a device therefor. The member 10 to be treated is arranged in an electrolytic bath in such a manner that the electrolytic bath is divided, and also,t...

11.01.2010