An optical disk apparatus can reliably detect the target recording layer of an optical disk having two recording layers. The optical disk apparatus is adapted to recording information on and reproducing information from an optical disk formed by sequentially laying a first recording layer, a second recording layer and a cover layer. The focal point of the light beam is moved closer to the optical ...

An optical disk apparatus for writing signals on a recording medium by irradiating the recording medium with a laser beam modulated based on the signals includes a first converting unit (7) for converting a first reflected laser beam component from the recording medium into electrical signals; a second converting unit (8) for converting a second reflected laser beam component into electrical signa...

An optical pickup includes a light source for emitting a light beam; an objective lens for condensing the light beam emitted from the light source and irradiating an optical recording medium with the condensed light beam; a collimator lens, disposed between the light source and the objective lens, for forming the light beam emitted from the light source into a parallel light beam and guiding the p...

A disk-shaped optical information recording medium (10) comprising a recording layer (16), a pressure sensitive adhesive layer or an adhesive layer (20), and a cover sheet (22) in this order on a substrate (12), and having a central hole (24), a track pitch of 300 to 600 nm and a groove depth of 40 to 150 nm, for recording and playing back information by being irradiated with a laser light at a wa...

To provide an optical information recording medium on which visual information can be recorded on a label face by using a laser apparatus for recording and reading electronic information by irradiation with a low output laser without exerting e.g. thermal influence over electronic information recorded on the medium. The present invention provides an optical information recording medium 100 having ...

A magnetic memory device includes a synthetic ferrimagnetic data layer (12), a soft reference layer (14) and a tunneling layer (16). The synthetic ferrimagnetic data layer (12) has a magnetic moment (M1) directable to a first orientation and a second orientation. The soft reference layer (14) has a lower coercivity than the synthetic ferrimagnetic data layer (12). The tunneling layer (16) has elec...

A phase change memory may be read so as to reduce the likelihood of a read disturb. A read disturb may occur, for example, when a reset device is raised to a voltage, which causes its threshold device to trigger. The triggering of the threshold device produces a displacement current which may convert a reset device to a set device. By ensuring that the reset cell never reaches a voltage that would...

An apparatus for comparing inputted signals by removing an offset voltage during adjusting an output impedance of a semiconductor memory device, includes a voltage comparator for comparing a first input signal applied to its positive input node with a second input signal applied to its negative input node to output a first output signal to its positive output node and its second output signal to a...

Loadless 4T SRAM cells, and methods for operating such SRAM cells, which can provide highly integrated semiconductor memory devices while providing increased performance with respect to data stability and increased I/O speed for data access operations. A loadless 4T SRAM cell comprises a pair of access transistors and a pair of pull-down transistors, all of which are implemented as N-channel trans...

A CAM bank is functionally divided into two or more sub-banks, without replicating CAM driver circuits, by disabling all match line discharge circuits in the bank, and selectively enabling the discharge circuits in entries comprising sub-banks. At least one selectively actuated switching circuit is interposed between the virtual ground node of each discharging comparator in the discharge circuit o...

A method for programming a multi-level-cell NAND flash memory device having plural memory cells is disclosed to reduce the programming time. The method comprises: programming each memory cell to a zero state, programming from the zero state to a first state by activating a first program signal and programming from the zero state to a quasi-second state and a semi-third state by activating a second...

It is an object of the invention to provide a nonvolatile memory capable of precisely determining the remaining service life of a memory cell. The nonvolatile memory includes memory cell groups 111 and dummy cell groups 112, each group arranged for each word to which an address is attached. The memory cell groups 111 each store data for one word. The dummy cell groups 112 are each composed of cell...

A program circuit and memory thereof for programming a flash memory are provided. The present invention adjusts the threshold voltage of the flash memory to program the flash memory with a constant current. When the program circuit is programming the flash memory, the present invention determines whether the threshold voltage of the flash memory is equal to a desired voltage according to the chang...

A structure of a thin film transistor (TFT) is provided. A substrate has a first surface and a second surface opposite to each other, in which the first surface has a patterned mask layer. A patterned first electrode layer is disposed on the second surface of the substrate and has a gate portion and a capacitor electrode portion. A patterned second electrode layer is disposed on the second surface...

An image sensor and a method of forming an image sensor. The image sensor includes an array of pixel cells at a surface of a substrate. Each pixel cell has a photo-conversion device. At least one a micro-electro-mechanical system (MEMS) element including a photonic crystal structure is provided over at least one of the pixel cells. The MEMS-based photonic crystal element is supported by a support ...

For providing a chip-type light emitting device, having a plural number of light emitting elements therein, so as to enable to obtain a high optical output with preferable conversion efficiency thereof, and a wiring substrate for that, the chip-type light emitting device, mounting the plural number of the light emitting diodes 30, 30 . . . within an inside of an insulating substrate, has a base su...

Disclosed are a nanostructure with an indium gallium nitride quantum well and a light emitting diode employing the same. The light emitting diode comprises a substrate, a transparent electrode and an array of nanostructures interposed between the substrate and the transparent electrode. Each of the nanostructures comprises a core nanorod, and a nano shell surrounding the core nanorod. The core nan...

An exemplary active matrix organic light emitting display (OLED) ( 10 ) includes a transparent insulating substrate ( 20 ), a thin film transistor (TFT) structure ( 245 ) formed on the transparent insulating substrate, and an organic emission structure ( 244 ) transparent insulating substrate. The TFT structure includes a source electrode ( 261 ), a drain electrode ( 262 ), and a passivation layer...