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Patent
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Title of the invention and abstract piece Date of publication of the patent
1 JP2000248969A
METHOD FOR RESTING AND RE-ACTUATING CYLINDER OF MOTOR VEHICLE INTERNAL COMBUSTION ENGINE

PROBLEM TO BE SOLVED: To avoid switching shocks in the restart of a rested cylinder by performing intervention of an externally operable brake, when the starting of an engine is performed stepwise according to a preset program. SOLUTION: In an 8-cylinder type engine having a direct injection valve controlled by a digital engine control device, cylinders are ignited one by one every 90 deg.-cranksh...

12.09.2000
2 JP2000249171A
NON-ENERGIZED MAGNETICALLY OPERATING BRAKE OF DRY TYPE WITH SINGLE DISC

PROBLEM TO BE SOLVED: To provide a mechanism of a non-energized magnetically operating brake of dry type with single disc, capable of feeding a braking force to the output shaft, etc., of a motor with no use of a guide pin fitted in by pressure. SOLUTION: A guide projection 20 protruding in the moving direction of a hold-down plate 15 is formed integrally on a ring-shaped end face 24 of a hold-dow...

12.09.2000
3 JP2000249177A
DISC BRAKE DEVICE FOR VEHICLE

PROBLEM TO BE SOLVED: To provide a disc brake device for a vehicle to serve as a parking brake with high safety and also as an emergency brake or holding brake with satisfactory functions. SOLUTION: The base ends of a first arm 3 and a second arm 4 are pivoted by a shaft 2 swingably. Brake shoes 9 and 17 re installed on shoe fixing parts 3e, (3f) and ones 4e, (4f) of the arms 3 and 4. Brake spring...

12.09.2000
4 JP2000249178A
VEHICULAR BRAKE WITH ADJUSTMENT RELEASING DEVICE

PROBLEM TO BE SOLVED: To provide a switch device for controlling the adjustment release of a vehicle brake when maintenance is required, for example replacement of a friction pad. SOLUTION: A vehicle brake is of caliper type to electrically operate an active adjustment of the operational play of brake linings 26 and 34, wherein an axial direction displacement of tappets 22 and 24 inside the brake ...

12.09.2000
5 CA2114638C
A BIODEGRADABLE FILM AND METHOD OF MAKING SAME;FILM BIODEGRADABLE ET METHODE DE FABRICATION

A biodegradable thermoplastic film is disclosed comprising an alkanoyl polymer, a destructured starch and an ethylene copolymer. The film can be stretched providing breathability and enhancing its biodegradability,

12.09.2000
6 BR9811352A
PROCESSO PARA PRODUÇÃO DE PARTÌCULAS DE POLIOLEFINA EXPANDIDAS (EPO) , E, USO DAS MESMAS

''PROCESSO PARA PRODUçãO DE PARTìCULAS DE POLIOLEFINA EXPANDIDAS (EPO), E, USO DAS MESMAS'' A invenção é relacionada a um processo para a produção de partículas de poliolefina expandidas, de acordo com o qual o granulado de poliolefina é impregnado com um agente de expansão volátil em suspensão, sob pressão e a seguir relaxado. O meio de suspensão tem uma densidade mais baixa do que o granulado de...

12.09.2000
7 BR9811565A
MÉTODO PARA A MONTAGEM DE PLACAS DE IMPRESSÃO EM LUVAS E PARA A MONTAGEM DAS LUVAS RESULTANTES EM CILINDROS DE MÁQUINA DE IMPRESSÃO FLEXOGRÁFICA.

Patente de Invenção: "MéTODO PARA A MONTAGEM DE PLACAS DE IMPRESSãO EM LUVAS E PARA A MONTAGEM DAS LUVAS RESULTANTES EM CILINDROS DE MáQUINA DE IMPRESSãO FLEXOGRáFICA". O método de montagem de placa de impressão compreende os seguintes estágios: a aplicação destas placas relativas a uma determinada cor em uma luva feita de um filme de polímero transparente flexível substancialmente não-defor...

12.09.2000
8 US6117689A
STABLE HIGH-DIELECTRIC-CONSTANT MATERIAL ELECTRODE AND METHOD

A structure for, and method of forming, an oxygen diffusion resistant electrode for high-dielectric-constant materials is disclosed. The electrode comprises a single grain of an oxygen stable material over a barrier layer. The single crystal oxygen stable layer is generally substantially impervious to oxygen diffusion at all relevant deposition and annealing temperatures. The disclosed structure i...

12.09.2000
9 US6117692A
CALIBRATED METHODS OF FORMING HEMISPHERICAL GRAINED SILICON LAYERS

A method of forming a silicon layer includes the step of calibrating the heater temperature so that a predetermined temperature is maintained when a microelectronic substrate is subsequently heated despite a number of processing runs previously performed. This calibrating step includes loading a test substrate into the reaction chamber, subjecting the test substrate to the predetermined reaction r...

12.09.2000
10 US6117727A
MANUFACTURING PROCESS OF CAPACITOR

A method for manufacturing a capacitor includes the steps of a) forming a sacrificial layer over the etching stop layer, b) partially removing the sacrificial layer, the etching stop layer, and the dielectric layer to form a contact window, c) forming a first conducting layer over the sacrificial layer and in the contact window, d) partially removing the first conducting layer and the sacrificial ...

12.09.2000
11 US6117746A
METHODS FOR FORMING PATTERNED LAYERS INCLUDING NOTCHED ETCHING MASKS

A method for patterning a layer of a microelectronic device includes the step of forming an etching mask on the layer to be etched opposite the microelectronic substrate. The etching mask defines exposed portions of the material layer and the etching mask has a notch in the sidewall thereof adjacent the material layer. The exposed portions of the material layer are then etched. More particularly, ...

12.09.2000
12 US6117747A
INTEGRATION OF MOM CAPACITOR INTO DUAL DAMASCENE PROCESS

A method for fabricating a metal-oxide-metal capacitor using a dual damascene process is described. A dielectric layer is provided overlying a semiconductor substrate. A dual damascene opening in the dielectric layer is filled with copper to form a copper via underlying a copper line. A first metal layer is deposited overlying the copper line and patterned to form a bottom capacitor plate contacti...

12.09.2000
13 US6117756A
METHOD OF FORMING HIGH DENSITY AND LOW POWER FLASH MEMORIES WITH A HIGH CAPACITIVE-COUPLING RATIO

The method for forming flash memory includes the following steps. At first, a semiconductor substrate with an isolation region formed thereupon is provided. The semiconductor substrate has a pad oxide layer and a first nitride layer formed thereover. A portion of the first nitride layer and a portion of the pad oxide layer are removed to define a gate region. A first oxide layer is formed and then...

12.09.2000
14 US6117764A
USE OF A PLASMA SOURCE TO FORM A LAYER DURING THE FORMATION OF A SEMICONDUCTOR DEVICE

A method used to form a semiconductor device having a capacitor comprises placing a semiconductor wafer assembly into a chamber of a plasma source, the wafer assembly comprising a layer of insulation having at least one contact therein and a surface, and further comprising a conductive layer over the surface and in the contact. Next, in the chamber, a layer of etch resistant material is formed wit...

12.09.2000
15 US6117789A
METHOD OF MANUFACTURING THIN FILM RESISTOR LAYER

A method of manufacturing a thin film resistor layer. A first insulating layer is formed on a substrate, wherein the substrate has at least a device previously formed therein. A thin film resistor layer is formed on the first insulating layer. A second insulating layer is formed on the thin film resistor layer. The second insulating layer and the thin film resistor layer are patterned. A third ins...

12.09.2000
16 US6118140A
SEMICONDUCTOR APPARATUS HAVING CONDUCTIVE THIN FILMS

In forming an electrode on a silicon oxide film on a semiconductor substrate through a silicon oxide film, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers. The portion of the gate electrode is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and of crystallizing (recrystallizing...

12.09.2000
17 US6118146A
MICROELECTRONIC CAPACITORS HAVING TANTALUM PENTOXIDE DIELECTRICS

A microelectronic capacitor is formed by forming a first tantalum pentoxide film on a conductive electrode and annealing the first tantalum pentoxide film in the presence of ultraviolet radiation and ozone. The forming step and annealing step are then repeated at least once to form at least a second tantalum pentoxide film which has been annealed in the presence of ultraviolet radiation, on the fi...

12.09.2000
18 JP2000248381A
HYDROPHILIC TREATING METHOD FOR ALUMINUM MATERIAL, SUBSTRATE TREATING AGENT AND HYDROPHILIC COATING MATERIAL THEREFOR

PROBLEM TO BE SOLVED: To provide a hydrophilic treating method for an aluminum material for forming a hydrophilic coating film, particularly excellent in hydrophilic properties after press forming on the surface of an aluminum material and to provide a substrate treating agent and a hydrophilic coating material for executing such hydrophilic treatment. SOLUTION: This hydrophilic treating method fo...

12.09.2000
19 BR9810860A
PROCESSO PARA A PREPARAÇÃO DE REVESTIMENTOS RESISTENTES A RANHURAS, ESPECIALMENTE PARA A PREPARAÇÃO DE LAQUEAMENTOS DE VÁRIAS CAMADAS

Patente de Invenção: ''PROCESSO PARA A PREPARAçãO DE REVESTIMENTOS RESISTENTES A RANHURAS, ESPECIALMENTE PARA A PREPARAçãO DE LAQUEAMENTOS DE VáRIAS CAMADAS''. A presente invenção refere-se a um processo para a preparação de revestimentos resistentes a ranhuras, o qual é caracterizado pelo fato de que é aplicado um agente de revestimento, que, no estado endurecido, apresenta um módulo de acu...

12.09.2000
20 US6117265A
METHOD AND APPARATUS FOR HEAT-WELDING LENGTHS OF PROFILES FOR SEALING GASKETS

PCT No. PCT/EP96/01742 Sec. 371 Date Oct. 13, 1998 Sec. 102(e) Date Oct. 13, 1998 PCT Filed Apr. 25, 1996 PCT Pub. No. WO97/40974 PCT Pub. Date Nov. 6, 1997A method and apparatus for heat-welding corners lengths of profiles together, for sealing gaskets, where the profiles include at least one extendible or compressible air chamber and are cut at their ends at an angle. The method includes positio...

12.09.2000