A digital picture signal processing apparatus is disclosed, that comprises a picture processing means for compressing a captured digital picture signal, and a mode designating means for generating a signal that designates a picture processing operation of the picture processing means to a first mode or a second mode, wherein when the first mode is designated, the picture processing means generates...

A method of forming thick titanium nitride films with low resistivity. Using a thermal chemical vapor deposition reaction between ammonia (NH3) and titanium tetrachloride (TiCl4), a titanium nitride film is formed at a temperature of less than about 600 DEG C, and an NH3:TiCl4 ratio greater than about 5. The deposited TiN film is then treated in a hydrogen-containing plasma such as that generated ...

A thin film passive element includes at least one of a capacitance element having a plurality of conductive layers and a dielectric material layer and an inductance element formed of a patterned conductive layer is stacked on a circuit element-forming region of a semiconductor substrate provided with a plurality of connection pads and is connected to the circuit element of the circuit element-form...

Methods and apparatus for oxygen radical annealing or plasma annealing various layers (e.g., a lower electrode, a dielectric layer, or an upper electrode) of a microelectronic capacitor on a substrate are provided. By oxygen radical or plasma annealing the lower electrode of the capacitor, the leakage current characteristic of the capacitor may be improved such that the leakage current is reduced,...

The invention is directed to a process for forming a recess in at least one poly silicon overfilled trench in an integrated circuit, comprising the following steps: uniformly etching the poly silicon overfill layer (4); stopping the etching before the poly silicon layer (4) is completely removed from the surface of the integrated circuit; and recess etching the polysilicon layer (4) with microtren...

A capacitor structure that comprises a top platinum electrode and a bottom electrode having insulator on the sidewalls of the electrodes, and wherein the bottom electrode is from depositing a first electrode portion being recessed with respect to the insulator on the sidewalls thereof and depositing a second insulator portion is provided.

This invention relates to overcome the problem of a prior art such that relative permittivity of pure tantalum pentaoxide is increased in a range of several times by forming conditions, but reproducibility and stability are insufficient, regarding a structure and a forming method of a semiconductor capacitance storage device, in particular, a tantalum niobium pentaoxide dielectric film. After an R...

A semiconductor device comprising: at least first and second levels of interconnect conductor for connection to a semiconductor layer; and a stack of alternating conductive and insulative layers formed in vertical alignment with respect to an underlying plane and formed between the first and second levels of conductor, including a first conductive layer, a first insulator layer formed over the fir...

An electrical oil having reduced gassing tendency includes a major amount of a paraffinic or naphthenic basestock and a blend of certain hindered phenols, especially a blend of 2,6-di-t-butyl phenol and 2,6-di-t-butyl cresol. A further enhanced gassing tendency can be provided to the electrical oil by including a tolyltriazole derivative.

A device is disclosed for activating and deactivating magnetic electronic article surveillance (EAS) markers, and particularly those EAS markers that are associated with magnetically recorded media. In one embodiment, the device includes control circuitry comprising a coil, such as a solenoid-type coil, that provides a substantially uniform magnetic field that reliably activates and deactivates th...

The present invention provides the technology to manufacture a wiring substrate with a shorter TAT (turn around time). Wirings of the wiring substrate are formed by the exposure treatment using a photomask M1 which has shade patterns 2, each containing at least nano particles and a binder.

The present invention is related to a semiconductor device and its manufacturing method, the circuit board, and the electronic machine, in which the substantial mounting yield of circuit board is increased in the stacked structure of semiconductor device. The semiconductor device includes a plurality of semiconductor chips 10; and a plurality of substrates, which have larger outlook than the semic...

A B-doped Si1-x-yGexCy layer 102 (where 0 < x < 1, 0.0045 ≤ y < 1) is epitaxially grown on a Si substrate 101 using a UHV-CVD process. In the meantime, in-situ doping is performed using B2H6 as a source gas of boron (B) which is an impurity (dopant). Next, the Si1-x-yGexCy layer 102 is annealed to form a B-doped Si1-x-yGexCy crystalline layer 103. In this case, the annealing temperature is set pre...

A storage pixel sensor disposed on a semiconductor substrate comprises a photodiode having a first terminal coupled to a first potential and a second terminal. A barrier transistor has a first terminal coupled to the second terminal of the photodiode, a second terminal and a control gate coupled to a barrier set voltage. A reset transistor has a first terminal coupled to the second terminal of the...

Phase shift keying (PSK) or differential phase shift keying (DPSK) used as t he coding scheme in a high bit rate, long haul dispersion-managed optical transmission system, in which the signaling format is RZ. The system can combine multiple individual channels with different wavelengths in a WDM or dense wavelength division multiplexed (DWDM) arrangement. Dispersion management can be provid ed usi...

An injector device for delivery of liquid from a high pressure, the device comprising a housing, a pressure chamber 2 comprising a pressure barrel 4 for accommodation of at least one piston therein and having a front end opening 6 for ejection of the liquid, the pressure chamber being of sufficient strength to sustain the liquid pressure. The device further comprises a storage chamber 16, separate...

A flexible pressure-sensitive food grade wrap film, and a process for manufacturing the film. The film includes a substrate overcoated with a pressure-sensitive adhesive, a release overprinted on the adhesive that prevents the adhesive from clinging to the surface of an article or to itself without applying pressure, and, optionally, a release coating on the opposite side of the substrate. Once pr...

The invention provides a forming metal chelator having an amino acid sequence of three amino acid residues represented by: X1-X2-Cys; in which X1 represents an amino acid residue other than Cys residue; X2 represents an amino acid residue other than Cys residue and Pro residue; functional groups at the N-terminus, C-terminus and side chain may be substituted with protected groups; and each of the ...

The present invention aims to simplify the structure of command prefetching for program processing by allocating commands on the main linear continuous addresses of loop command that is almost non-existing. The bus controller (4) for controlling the bus of the external memory (2) consists of several command buffers (Buf4, Buf8, BufC), several flags (Flg4, Flg8, FlgC), and a buffer control circuit ...

The present provides a self-luminous display device, such as an organic EL display device, capable of reducing power consumption and manufacturing costs. The device comprises a selective TFT 4 of which the gate is connected with a gate line 1 and the drain is connected with a data line 2, and a driving TFT 6 of which the gate is connected with the source of the selective TFT 4, a positive power so...