The conduction state of a MOS transistor 11 is definitively controlled with a laser beam 21 by forming an electrical connection 22 between the gate 16 and the underlying portion d of the source 14 or drain 15 region. The invention applies in particular to the correcting of integrated circuits (reconfiguration, redundancy) and to the programming of integrated read-only memories.

An ultraviolet erasable nonvolatile semiconductor device has a floating gate (13), a control gate (18), and a gate insulating layer (17) interlayered between the floating gate and the control gate. The interlayered gate insulating layer (17) consists of three layers, a first silicon oxide layer (14), a silicon nitride layer (15) layered on the first silicon oxide layer, and a second silicon oxide ...

An electric laminar resistor wherein a thin metal film is applied to a ceramic substrate. Metal film material is removed to form a resistance track and recessed connecting zones at opposite ends of the track. A burnt-in thick layer paste extends through the connecting zone recesses and solidified to form connecting elements that are adhered to the substrate. A metal powder and glass frit coating i...

A semiconductor device includes at least one wiring layer (16, 23) containing aluminum as the major constituent and provided through an insulating film (12) on a semiconductor substrate on which components or elements are formed, and a heat resistant high molecular organic film (13) having a radical of small water absorbing property provided on side surfaces of the wiring layer. The heat resisting...

A sealable contamination proof container package bottom and top for storing and transporting a plurality of silicon wafers in a wafer carrier. The package bottom includes four sides, a continuous vertical surface for tape sealing surrounding the four sides, a lip positioned on a vertical edge, opposing hook latches on opposing sides, opposing hand grip recesses on the opposing sides and a raised b...