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| № п/п |
Номер патенту |
Назва винаходу та фрагмент реферату | Дата публікації патента |
|---|---|---|---|
| 1 | BR110415A |
FIBRAS DE POLIBENZAZOL E SUA UTILIZAÇÃO
"FIBRAS DE POLIBENZAZOL E SUA UTILIZAçãO". Fibras de polibenzazol em que a rugosidade quadrada média da superfície da fibra é de 20 nm ou menos, ou fibras de polibenzazol em que o fator de largura de meia altura de difração meridiana de raios-X é de 0,3<198> /GPa ou menos, e sua utilização tal como em membros resistentes a choque e feltro resistente ao calor, etc.; Polybenzazole fibers wherein the... |
11.02.2003 |
| 2 | BR110807A |
PROCESSO E DISPOSITIVO PARA O ACIONAMENTO AUTOMÁTICO DE UM FREIO DE VEÌCULO
"PROCESSO E DISPOSITIVO PARA O ACIONAMENTO AUTOMáTICO DE UM FREIO DE VEìCULO". A invenção se refere a um processo e a um dispositivo para o acionamento automático de um freio de veículo. No caso de um processo para o acionamento automático de um freio de veículo, uma embreagem acionada com força externa normalmente é acionada de tal modo que, ela não interrompe completamente a transmissão do momen... |
11.02.2003 |
| 3 | BR204305A |
DIRETÓRIO NACIONAL DE ENDEREÇOS E SISTEMA NACIONAL DE GERENCIAMENTO DE INFORMAÇÕES
"DIRETóRIO NACIONAL DE ENDEREçOS E SISTEMA NACIONAL DE GERENCIAMENTO DE INFORMAçõES". A serem usados pela Empresa Brasileira de Correios e Telégrafos (ECT) e inclui programas geradores de relatórios gerenciais e estatísticas e sistemas para a troca de informações operacionais no tocante à operação dos diversos centros de triagem de correspondências da ECT, caracterizado por o Diretório Nacional de... |
11.02.2003 |
| 4 | US6517616B2 |
SOLVATED RUTHENIUM PRECURSORS FOR DIRECT LIQUID INJECTION OF RUTHENIUM AND RUTHENIUM OXIDE
A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium precursor compound and a solvent capable of solubilizing the ruthenium precursor compound. A method is further p... |
11.02.2003 |
| 5 | US6517898B1 |
METHOD OF COATING
The article in accordance with the invention is a corrosion and erosion resistant article having good release characteristics which includes a metal body having a first surface thereon and a base coat adhering to the first surface. The base coat comprises at least one layer of inorganic particulate material bonded to the first surface. A second coat adheres to the base coat. The second coat compri... |
11.02.2003 |
| 6 | US6518117B2 |
METHODS OF FORMING NITROGEN-CONTAINING MASSES, SILICON NITRIDE LAYERS, AND CAPACITOR CONSTRUCTIONS
The invention encompasses a method of forming a silicon nitride layer. A substrate is provided which comprises a first mass and a second mass. The first mass comprises silicon and the second mass comprises silicon oxide. A sacrificial layer is formed over the first mass. While the sacrificial layer is over the first mass, a nitrogen-containing material is formed across the second mass. After the n... |
11.02.2003 |
| 7 | US6518120B2 |
CAPACITOR AND METHOD OF MANUFACTURING THE SAME
A capacitor and a method of manufacturing the same are disclosed. The BST dielectric film is disposed between the lower electrode by coating a sidewall of the upper electrode and then forming the lower electrode in a second contact hole defined by the upper electrode and BST film. As such, degradation in the step coverage characteristic caused by forming a BST dielectric film having a desired comp... |
11.02.2003 |
| 8 | US6518143B2 |
METHOD FOR FABRICATING A LOWER PLATE FOR A CAPACITOR OF SEMICONDUCTOR DEVICE
A method for fabricating a lower plate of a capacitor of a semiconductor device, including forming a planarization layer on a semiconductor substrate, forming a conductive plug in the planarization layer, forming a first nitride film on the planarization layer and the top surface of the conductive plug, forming a first oxide film on the top surface of the first nitride film with a trench in the fi... |
11.02.2003 |
| 9 | US6518198B1 |
ELECTROLESS DEPOSITION OF DOPED NOBLE METALS AND NOBLE METAL ALLOYS
A method for forming an oxidation barrier including at least partially immersing a semiconductor device structure in an electroless plating bath that includes at least one metal salt and at least one reducing agent. The reaction of the at least one metal salt with the at least one reducing agent simultaneously deposits metal and a dopant thereof. The oxidation barrier may be used to form conductiv... |
11.02.2003 |
| 10 | US6518203B2 |
METHOD AND APPARATUS FOR INTEGRATING A METAL NITRIDE FILM IN A SEMICONDUCTOR DEVICE
The present invention describes a method of processing a substrate. According to the present invention a dielectric layer is formed on the substrate. The dielectric layer is then exposed in a first chamber to activated nitrogen atoms formed in a second chamber to form a nitrogen passivated dielectric layer. A metal nitride film is then formed on the nitrogen passivated dielectric layer. |
11.02.2003 |
| 11 | US6518610B2 |
RHODIUM-RICH OXYGEN BARRIERS
A structure and method are disclosed for forming a capacitor for an integrated circuit. The capacitor includes a rhodium-rich structure, a rhodium oxide layer in direct contact with the rhodium-rich structure, a capacitor dielectric in direct contact with the rhodium oxide layer and a top electrode over the capacitor. The rhodium-rich structure can include rhodium alloys and the capacitor dielectr... |
11.02.2003 |
| 12 | US6518642B2 |
INTEGRATED CIRCUIT HAVING A PASSIVE DEVICE INTEGRALLY FORMED THEREIN
The invented method and device provide a reliable contact to a passive device of a semiconductor circuit device, the passive device being, for example, a resistor, an inductor, a fuse or the like. Adjacent, spaced, elevated, so-called dummy pattern (shoulder) regions are formed under the portions of the passive device on which the contact hole is formed. The shoulder region is formed of the same m... |
11.02.2003 |
| 13 | KR20030011568A |
SEMICONDUCTOR MANUFACTURING DEVICE, AND CLEANING METHOD THEREFOR
PURPOSE: To effectively remove a ruthenium film, an osmium film, and oxides thereof deposited or adhered inside a semiconductor treatment device. CONSTITUTION: Reaction products deposited or adhered inside the device are rapidly and effectively removed by individually using an oxygen atom donating gas and a halogen gas and feeding the gases inside the device. The device can be stably operated, a t... |
11.02.2003 |
| 14 | US6516673B2 |
DEVICE TO ENCAPSULATE A PRESSURE SENSOR
A device for encapsulating a monitoring device for a pneumatic tire with an encapsulation material includes an encapsulation body having an encapsulation chamber. The monitoring device has at least a pressure sensor and an antenna. A damming element is carried by the encapsulation body in an adjustable manner such that the damming element prevents the pressure sensor from being clogged with the en... |
11.02.2003 |
| 15 | US6517139B2 |
ASSEMBLY STRUCTURE OF AN INSTRUMENT PANEL
The present invention is directed to an assembly structure designed to improve the process of accurately assembling an instrument panel supported by a steering support member in a vehicle. The assembly structure includes side brackets (16), (17) arranged to mount both ends of a steering support member (15) to a car body. Side bracket (16) includes an extended portion (20) provided with an instrume... |
11.02.2003 |
| 16 | US6517231B1 |
LIQUID STIRRER WITH MAGNETIC COUPLING
The stirrer comprises a driving magnetic portion (13) and a driven magnetic portion (14). The driven portion is for placing on the bottom of a receptacle (51) containing a liquid to be stirred. The driving portion (13) is controlled so as to drive the driven portion (14) in rotation about a predetermined axis of rotation (81) by means of magnetic coupling with the driving portion. The stirrer is c... |
11.02.2003 |
| 17 | US6517584B1 |
FLEXIBLE PROSTHESIS IN PARTICULAR FOR CURING HERNIAS BY COLIOSCOPY
A flexible prosthesis, in particular for curing hernias by colioscopy, the prosthesis including at least one anchor, device made of shape memory material designed to be deformed merely under temperature control from a storage position into a fixing position in which the anchor device interferes with the surrounding tissue. |
11.02.2003 |
| 18 | US6518018B1 |
RNA-ANTIBODY FUSIONS AND THEIR SELECTION
Described herein are methods and reagents for the selection of protein molecules that make use of RNA-protein fusions. |
11.02.2003 |
| 19 | US6518724B2 |
WALL SWITCH DEVICE AND POWER OUTLET DEVICE
A wall switch device and a power outlet device are described. In one embodiment, the wall switch device includes a wall switch plate, a component integral to a receptacle on the wall switch plate, a control charging module, and an AC power input. The wall switch plate is fastened to a light switch module on a wall. The control charging module includes electrical contacts corresponding to electrica... |
11.02.2003 |
| 20 | US6518861B2 |
SURFACE ACOUSTIC WAVE FILTER FORMED WITH A RIPPLE AT THE HIGH FREQUENCY SHOULDER OF THE PASS BAND
A surface acoustic wave filter has a plurality of interdigital transducers arranged in a ladder circuit structure. Each of the interdigital transducers has a first comb-shaped electrode and a second comb-shaped electrode, each of which has a plurality of electrode fingers and a bus bar connected to first ends of the plurality of electrode fingers. The first and second comb-shaped electrodes interd... |
11.02.2003 |