There is provided a deceleration control system for a vehicle, in which a braking force is applied to a vehicle by a braking device when a determination that a shift speed or a gear ratio of a transmission of a vehicle is changed to a shift speed or a gear ratio for a relatively low vehicle speed is made. Control is performed such that a deceleration (Gt), which is applied to the vehicle by activa...

A system and method for isothermally distributing a temperature across a semiconductor device. A furnace assembly is provided, which includes a processing tube configured to removably receive a wafer carrier having a full compliment of semiconductor wafers. A heating assembly is provided which can include a resistive heating element positioned to heat air or other gases allowed to enter the proces...

Multiple semiconductor device components and passive device components fixed to a substrate are embedded within an electroconductive-film/insulating-resin-film structure, and are thermally bonded to an insulating resin film.

A semiconductor device and method of manufacture thereof having a less free fluorine (F) fluorine containing Silica Glass (FSG) dielectric film formed thereon. The FSG dielectric film includes about 25% or less free F, has a porosity of about 5% or less and has a dielectric constant of about 3.8 or less. A first barrier layer may be disposed between a workpiece and the FSG dielectric film, and a s...

During pattern transfer to a film stack, the hard mask layer, such as a tunable etch resistant antireflective coating (TERA), is consumed when etching the underling layer(s), leading to reduced etch performance and potential damage to the underlying layer(s), such as lack of profile control. A method of and system for preparing a structure on a substrate is described comprising: preparing a film s...

A method for making a film stack containing one or more silicon-containing layers and one or more metal-containing layers and a substrate processing system for forming the film stack on a substrate are provided. The substrate processing system (400; 500; 600; 700; 800; 900) includes one or more transfer chambers (408) coupled to one or more load lock chambers (404, 406) and two or more different t...

The width of self aligned contact (SAC) region formed between adjacent pass gates (130b) and access gates (130a) of a gate layer (130) formed on a substrate, is set larger than the width of SAC region formed between adjacent access gates. An independent claim is also included for method of forming memory cell of semiconductor memory device.

An adhesive sheet (S) is expanded by expanding means (20) with a plate-like article (W) being mounted to a frame (F) after dicing of the plate-like article (W) to increase spacings between individual chips (T), an expanded state of the adhesive sheet (S) is maintained by expansion maintaining means (10), so that the plate-like article (W) is able to be conveyed together with the frame (F) with the...

Transferring a working layer (14, 16) of monocrystalline material from one support to another comprises: (i) forming a substrate comprising a detachable interface (12) between the working layer and a first support (10), with a ring (161) of material surrounding the interface; (ii) removing the ring to allow a detachment tool to access the interface; (iii) bonding the free surface of the working la...

A method is provided for etching a dielectric structure. The dielectric structure comprises: (a) a layer of undoped silicon oxide or F-doped silicon oxide; and (b) a layer of C,H-doped silicon oxide. The dielectric structure is etched in a plasma-etching step, which plasma-etching step is conducted using a plasma source gas that comprises nitrogen atoms and fluorine atoms. As one example, the plas...

A device for generating radiation based on a discharge includes a cathode (33k) and an anode (33a). The cathode and anode material are supplied in fluid state. The material forms a plasma pinch when the device is in use. Optionally, nozzles (31) may be used to supply the material. The cathode and/or anode may form a flat surface. The trajectories (33) of the material may be elongated. A laser (37)...

A method for forming a passivation layer is disclosed. In the method, a substrate containing a top surface and a bottom surface opposite to the top surface is first provided, wherein a plurality of conductive pads are disposed on the top surface thereof. Thereafter, a first passivation layer is formed on the top surface of the substrate, wherein the first passivation layer has a characteristic of ...

A method is provided for forming a titanium nitride layer in a metal-insulator-metal (MIM) capacitor. The deposition of a titanium nitride layer is carried out by means of an MOCVD method using a metallo-organic material as a source gas, followed by a rapid thermal process (RTP) at a high temperature. Through the RTP, impurities in the titanium nitride layer are removed and a surface area of the t...

In the step of thermally processing a semiconductor substrate by irradiating the semiconductor substrate with lamp light, a free carrier absorption layer for absorbing the irradiated lamp light is provided in advance in the semiconductor substrate. Thus, it is possible to increase the temperature controllability in a low temperature range during an RTP process, and to reduce, at a low cost, variat...

PROBLEM TO BE SOLVED: To provide an ejector pin module capable of lifting a chip evenly without chip slant and ensuring high convenience at maintenance. Ž

SOLUTION: This ejector pin module comprises an ejector pin block 51, a connection block 53 and multiple ejector pins 52. The connection block 53 is formed above the ejector pin block 51 and multiple ejector pins 52 are formed on the connect...

A semiconductor device including a plurality of input/output cells and having a first bond pad and at least one second bond pad coupled to each input/output cell. The first bond pads comprise a first pattern, and the at least second bond pads comprise at least one second pattern, wherein the at least one second pattern is different from or the same as the first pattern. Either the first bond pads,...

Device for testing the surface state of a plate in which the speed of gluing together of two plates (11, 12) at the interface (13) between the plates is determined. Said device comprises a device for automatic detection of the onset of gluing and a device for automatic detection of the passage of a gluing wave between the two plates. The speed of gluing is proportional to the surface quality. An ...

Systems and methods for etching probe cards are described. In particular, a fixture device is used in facilitating an electrical charge to the base of probe card needles during etching of the probe card needles. The fixture device includes an electrically conductive base having an electrically conductive rod and a plurality of electrically conductive pins extending from the base. The electrically ...

Semiconductor processing apparatus is disclosed which provides for movement of a scanning arm 60 of a substrate or wafer holder 180 , in at least two generally orthogonal directions (so-called X-Y scanning). Scanning in a first direction is longitudinally through an aperture 55 in a vacuum chamber wall. The arm 60 is reciprocated by one or more linear motors 90 A, 90 B. The arm 60 is supported rel...

A vision system and method for calibrating motion of a robot disposed in a processing system is provided. In one embodiment, a vision system for a processing system includes a camera and a calibration wafer that are positioned in a processing system. The camera is positioned on the robot and is adapted to obtain image data of the calibration wafer disposed in a predefined location within the proce...