A vehicle crash barrier (10) for decelerating a vehicle that has left a roadway includes an elongated frame having a number of sections (14, 16, 18) including a front section (14) and at least one additional section (16, 18) arranged end to end along an axial direction. The frame is configured to collapse when axially struck on the front section (14) by a vehicle. The front section is releasably s...

A vehicle crash barrier (10) for decelerating a vehicle that has left a roadway includes an elongated frame having a number of sections (14, 16, 18) including a front section (14) and at least one additional section (16, 18) arranged end to end along an axial direction. The frame is configured to collapse when axially struck on the front section (14) by a vehicle. Each section includes a pair of s...

A laser interferometer uses an acousto-optically modulated laser (100) to produce a pair of orthogonally polarized frequency-shifted beams. The beams are passed down a monomode, polarization preserving optical fibre (110) in order to transmit the beams to a cavity (148). The beams are separated at polarizing beam splitter (128) and directed down measuring arm (130) and reference arm (132) of an in...

A connector assembly (1) for optical fibers(3, 3) comprises a holder (2) for holding optical fibers (3, 3) such that light signals emanated from one of the optical fibers (3, 3) is transmitted into at least one other of the optical fibers (3, 3), a grip (21) at a rear of the holder (2) a passage (37) through the holder (2) permitting flushing of contaminants, and a cover (4) applied on the holder ...

An improved damper diode is obtained by replacing the usual step junction (40) (P<+>-Nu-N<+>) structure (30) of the prior art with an epitaxial double sided Pi-Nu (i.e., P+ -Nu-N+) structure (60) in which the thickness (83,81) and impurity concentrations of the Pi (82) and Nu (80) regions are substantially equal and have a combined thickness about equal to the prior art Nu region (34) for the same...

A semiconductor device comprises: a collector region of first conductivity type; a base region of second conductivity type; an emitter region of the first conductivity type; a thin film provided on the emitter region for flowing a tunnel current; and a semiconductor material layer laminated on the thin film and having an energy band gap at least broader than that of a material of the emitter regio...

A splice block for use with a condition responsive security switch is provided. The splice block (14) is generally cylindrical and mounted to the end of the switch (12) with terminals unitarily extending therebetween. The splice block includes a base (34) and a cover (36) which is mountable in alternate first and second positions on the base. The first position (Fig. 1) permits wires to be inserte...

An insulated gate transistor comprises source regions; drain regions; channel regions provided between the source and drain regions; a gate electrode; and gate insulative film provided between the channel regions and the gate electrode. The device has a semiconductor region which is provided so as to be in contact with the channel regions and has the same conductivity type as that of the channel r...

A laminated plate member having a thickness of 60 to 120 mu m and used as a material of focal plane shutter blades or iris blades of a camera has an intermediate layer made from a material composed of uni-directionally oriented continuous or short carbon fibers and a matrix resin enveloping the carbon fibers, the material having a resin content ranging from 50 to 60 wt% when the carbon fibers are...

Single-panel pleated shades are created through an adaptation of methods used to create cellular shades. The cellular shades are created by known methods, and are then cut longitudinally to divide them into two single-panel pleated shades. Advantages of the invention include its enhanced appearance and low cost.

A photosensitive composition contains a polyimide constituted by a repeating unit having a hydroxyl group and a repeating unit having a siloxane bond, or a repeating unit having a hydroxyl group, a repeating unit having a siloxane bond, and a repeating unit other than these two repeating units, and a photosensitive agent consisting of an ester compound or an amide-ester compound of naphthoquinoned...

The present invention relates to a light beam deflector comprising a semi-conductor light beam deflecting device (4) adapted to receive an incident beam of light (5). According to the invention the semi-conductor device comprises a planar waveguide type thin film grating deflector (4) formed in a superlattice structure and including electrodes, such that if a variable voltage is applied to the ele...

A linear variable inductance transducer of the kind in which a spring-loaded plunger containing a magnetic core is axially movable in a stationary housing containing a coil assembly has the external surface of the plunger (1) made of ceramic material, guided linearly solely by sliding in a ceramic sleeve (2) in the housing. The sleeve may itself be flanged to form a bobbin for the coil assembly. <...

A connector (10) for terminating an electrical cable (20) having a conductive sheath (24) is disclosed. The connector (10) includes a gland (12) for receipt of the cable (20) and a gland nut (18) securable to the connector gland (12). Sealing means (16) supported between the gland (12) and the gland nut (18) effects a seal between the gland (12) and the cable (20) upon screw attachment of the glan...

Procédé de préparation d'une mémoire magnétooptique comportant sur un support (22) tel que verre, métal ou matière plastique, une couche sensible plane (21) de matériau magnétooptique destinée à recevoir en chaque point l'inscription de l'un des deux digits binaires 0 et 1 sous la forme de petits domaines juxtaposés et aimantés perpendiculairement au plan de la couche, dans l'une des deux directio...

The present invention relates to an integrated circuit comprising memories. The substrate on which the transistors of the memory locations are produced consists of an n<+> doped substrate (6) provided at its p<-> doped surface of small thickness converted by ion implantation into a n<-> doped layer in all the zones (9) surrounding the zone (7') in which the transistors constituting the memory loca...

La présente invention concerne un circuit d'isolation dynamique faisant partie d'un circuit intégré monolithique comprenant des transistors latéraux et des transistors verticaux, les transistors latéraux étant isolés par une région d'isolement reliée à un potentiel d'isolement (Viso), ces transistors latéraux étant connectés à des tensions d'une première polarité par rapport à une tension de référ...

L'invention concerne des alliages type Fe Nd B pour aimants permanents, les aimants permanents ainsi obtenus et une méthode de fabrication de ceux-ci. Ils possèdent des caractéristiques magnétiques élevées avec une bonne tenue en température et une bonne résistance à la corrosion atmosphérique. Ils comprennent en at% de 11 à 18 % de terres rares, 3 à 30% de Co, 5,9 à 12% B, 2 à 10% V, de l'Al, du ...

La présente invention a pour objet un procédé de réduction de la teneur en gaz polluants acides solubles dans l'eau contenus dans des fumées issues d'un dispositif d'incinération au cours duquel lesdites fumées sont refroidies par un échange de chaleur indirect avec un fluide froid en produisant un condensat chargé des polluants acides et dans lequel, après cette phase de refroidissement, lesdites...

Zur Beschichtung von Werkstückgrundkörpern (3) mit einem keramischen, elektrisch nicht leitenden Material wird während des Beschichtungsvorgangs eine pulsierende Gleichspannung an die Grundkörper (3) oder deren Halter (36) gelegt. Vorzugsweise wird die Pulshöhe von hohen negativen Werten auf kleinere negative Werte während des Bedampfens verändert. Auf die derart beschichteten Werkstücke kann eine...