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Назва винаходу та фрагмент реферату Дата публікації патента
1 JP4073236B
<назва відсутня>
20.11.1992
2 JP4073243B
<назва відсутня>
20.11.1992
3 JP4073246B
<назва відсутня>
20.11.1992
4 JP4073247B
<назва відсутня>
20.11.1992
5 JP4073282B
<назва відсутня>

In producing an electret element having piezoelectric properties by subjecting a vinylidene cyanide copolymer to a polarization treatment, the copolymer is heat-treated at a temperature below the glass transition temperature thereof prior to or simultaneously with the polarization treatment to thereby increase the longitudinal piezoelectric effect (Kt).

20.11.1992
6 JP4073287B
<назва відсутня>

A gas is introduced into a vacuum chamber after the vacuum chamber is evacuated, and a plasma is generated within at least part of the vacuum chamber. The specimen surface is exposed to the plasma so that the surface is treated. A plurality of different gases, such as SF6, N2, and the like, are used as the gas being introduced. The quantity of the gas is changed during the surface treatment. A con...

20.11.1992
7 JP4073289B
<назва відсутня>

PURPOSE:To improve the uniformity of treating a wafer by supplying gases of equal speeds and equal amounts to the surface of the wafer placed on a table from opposed electrodes. CONSTITUTION:Gas from a gas supply unit is supplied to a gas passage 11, sequentially passeed through the first vacant chamber 42 and the second vacant chamber 43 to a discharge space 40, i.e., the surface of a wafer 50. I...

20.11.1992
8 JP4073290B
<назва відсутня>
20.11.1992
9 JP4073291B
<назва відсутня>
20.11.1992
10 JP4073294B
<назва відсутня>

PURPOSE:To obtain a high positioning accuracy and the stability by a method wherein the friction coefficient on a guide surface of a theta table is made variable at the time of fixing and pivoting by utilizing the levitation of the table due to compressed air and vacuum chuck. CONSTITUTION:When the compressed air is introduced 13, an air film is produced between the theta table 12 and a base 11 an...

20.11.1992
11 JP4073295B
<назва відсутня>

In a LOCOS process, depressions are formed in a semiconductor body, and are filled by means of oxidation. The bottom and side walls of the depressions are coated with a double layer including an oxide and an oxidation-resistant material. This double layer is removed from the bottom of the depression and under-etching below the sidewalls under the oxidation-resistant layer is carried out to form ca...

20.11.1992
12 JP4073298B
<назва відсутня>
20.11.1992
13 JP4073300B
<назва відсутня>
20.11.1992
14 JP4073304B
<назва відсутня>
20.11.1992
15 JP4073317B
<назва відсутня>
20.11.1992
16 JP4073318B
<назва відсутня>
20.11.1992
17 JP4073320B
<назва відсутня>
20.11.1992
18 JP4073325B
<назва відсутня>
20.11.1992
19 JP4073326B
<назва відсутня>
20.11.1992
20 JP4073327B
<назва відсутня>
20.11.1992