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1 TW495365B
VERTICAL TYPE SOLID-LIQUID SEPARATING APPARATUS

A vertical type solid-liquid separating apparatus comprises a frame; an outer cylinder rotatably supported on the frame; an inner cylinder coaxially and rotatably disposed within the outer cylinder to define an annular separating chamber therebetween; a screw blade fixedly attached to the outer circumference of the inner cylinder so that a small gap remains between the screw blade and the inner wa...

21.07.2002
2 TW495409B
SCRIBING METHOD USING LASER BEAM

In the glass scribing process with traditional scribing method using glass cutter wheel, a large-scale crack is developed at a vertically crossing point of scribed lines. The solution is to decrease the radiated energy of the laser beam per unit area in the scribing in the second direction, compared to that of the scribing in the first direction.

21.07.2002
3 TW495604B
MULTICOLOR STARING SENSOR SYSTEM

A sensor system for viewing the light energy of a scene has an imaging detector which converts incident light energy into an electrical signal. Two colors are separately imaged by the detector in two imaging regions. The imaging system for each color includes a color filter positioned between the scene and the respective region of the detector, an optical train that focuses filtered color scene en...

21.07.2002
4 TW495403B
LUBRICANTS FOR DIE LUBRICATION AND MANUFACTURING METHOD FOR HIGH-DENSITIED IRON-BASED POWDER COMPACTS

A die is preheated at ordinary temperature or at a predetermined temperature and is sprayed over and introduced into itself with a lubricant for die lubrication prepared from mixing at least two different lubricants having melting points higher than the compaction pressure temperature before electrification adhesion of the said lubricant onto the surface of the die. The resulting die is filled wit...

21.07.2002
5 TW495431B
BI-DIRECTIONAL POLYESTER FILM, POLYESTER FILM LAMINATE, AND FLEXIBLE DISK

A bi-directional polyester film has a differential value of 0-0.002 between refractive indexes at outer and inner surfaces of the polyester film; a thermal contraction of 0- 0.6% upon being heated at a temperature of 105 DEG C for 30 min. under no load; a Young's modulus of greater than 4609 Mpa (470 kg/mm2), the difference between the greatest and smallest Young's moduli at the inner sid...

21.07.2002
6 TW495435B
METHOD AND MEANS OF TREADING A TIRE CARCASS

The invention concerns a method of treading a tire carcass, which comprises the following stages: a crude rubber tread (3) is deposited on a tire carcass (2) to be treaded; the tire carcass (2) thus covered having been mounted on a rim (6, 6') and inflated, a resilient annular or ring-shaped mold (7) possessing an inner annular surface ensuring molding of the tread (3) is positioned on the tread (...

21.07.2002
7 TW495549B
LUBRICANT FOR WARM COMPACTION FOR METALLURGICAL POWDER COMPOSITIONS AND ITS USE

This invention concerns a lubricant for warm compaction for metallurgical powder compositions, which lubricant contains a polyester, aromatic or partly aromatic, which has a number-average molecular weight Mn of 5000-50000. This invention further concerns a metal powder composition containing the lubricant, a method for making sintered products by using the lubricant, the use of the same in warm c...

21.07.2002
8 TW495527B
ETHYLENE POLYMER AND RESIN COMPOSITION FOR PRODUCING CAST FILM, AND PROCESS FOR PRODUCING CAST FILM

There are provided; (1) an ethylene polymer for cast film processing at a temperature of from about 210 to about 350 DEG C, which polymer has a slip velocity at a metal wail of not less than about 30 mm/sec, wherein the ethylene polymer is obtained by polymerization using a metallocene catalyst for olefin polymerization, and the slip velocity is measured at a temperature of 240 DEG C and a shear r...

21.07.2002
9 TW495691B
CROSSING NETWORK AND METHOD

A crossing network that matches buy and sell orders based upon a satisfaction and quantity profile is disclosed. The crossing network includes a number of trader terminals that can be used for entering orders. The orders are entered in the form of a satisfaction density profile that represents a degree of satisfaction to trade a particular instrument at various (price, quantity) combinations. Typi...

21.07.2002
10 TW495819B
METHOD AND SYSTEM FOR ELECTRONIC COMMERCE OF SEMICONDUCTOR PRODUCT, SYSTEM AND METHOD OF PRODUCTION, AND DESIGN SYSTEM, DESIGN METHOD AND MANUFACTURING METHOD OF PRODUCTION EQUIPMENT

A kind of electronic commerce system for semiconductor product is equipped with the followings: a virtual production line 13, in which the same function as that of an actual production line actually manufacturing the semiconductor products is built in a computer to computes a way of carrying out optimum lots; and a connection server 12, which connects the virtual production line 13 to a client ter...

21.07.2002
11 TW495352B
ENDOSCOPE CLEANING METHOD AND APPARATUS

A cleaning tube inserting into an endoscope for cleaning is formed with a flexible tube as a curling loop; a bypass channel 50 is used to link a first end 12a of the cleaning tube 12 and a second end thereof 12b to force the cleaning solution present inside the cleaning tube 12 refluxing from the first end 12a to the second end 12b via the bypass channel 50, thereby generating a circulation of the...

21.07.2002
12 TW495921B
IMPROVED BICMOS PROCESS WITH LOW TEMPERATURE COEFFICIENT RESISTOR (TCRL)

A low temperature coefficient resistor (TCRL) has some unrepaired ion implant damage. The damaged portion raises the resistance and renders the resistor less sensitive to operating temperature fluctuations. A polysilicon thin film low temperature coefficient resistor and a method for the resistor's fabrication overcomes the coefficient of resistance problem of the prior art, while at the same time...

21.07.2002
13 TW495923B
METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE BY TWO-STEP THERMAL TREATMENT

A method for manufacturing a capacitor of a semiconductor memory device by a two-step thermal treatment is provided. A lower electrode is formed on a semiconductor substrate. A dielectric layer is formed over the lower electrode. An upper electrode formed of a noble metal is formed over the dielectric layer. The resultant having the upper electrode undergoes a first thermal treatment under a first...

21.07.2002
14 TW495949B
METHOD OF FABRICATING RUTHENIUM-BASED CONTACT PLUG FOR MEMORY DEVICES

A method for fabricating semiconductor memory cells such as dynamic random access memory (DRAM) and ferroelectric random access memory (FRAM) with improved contact between the capacitor electrode and the underneath device area. It includes the following main steps of: (1) forming a first dielectric layer on a wafer surface; (2) forming at least one through opening in the first dielectric layer; (3...

21.07.2002
15 TW495959B
HIGHLY PRECISE SEMICONDUCTOR THIN FILM RESISTOR AND THE MANUFACTURING METHOD THEREOF

A semiconductor thin film resistor, which comprises a metal compound layer and a resistor layer; in which the resistor layer includes a first and a second doped regions, that the second doped region is connected to the metal compound layer, and the first doped region is connected to the second doped region, and the doping density of the second doped region is higher than that of the first doped re...

21.07.2002
16 TW495961B
ARRANGEMENT WITH AT LEAST AN INTEGRATED INDUCTIVE ELEMENT ON A SUBSTRATE

The passive inductive element (1) of the arrangement contains at least an integrated layer (10) made of the electric conductive material on an electric conductive substrate (2) made of semiconductive material. And the lay (10) is separated from the substrate by a layer (3) made of electric insulating material. According to this invention an indentation (21) is formed in the substrate, it is on the...

21.07.2002
17 TW495962B
SEMICONDUCTOR MEMORY AND METHOD FOR DRIVING THE SAME

A semiconductor memory of this invention is composed of an MFMIS transistor including a first field effect transistor and a ferroelectric capacitor formed on or above the first field effect transistor with a gate electrode of the first field effect transistor working as or being electrically connected to a lower electrode of the ferroelectric capacitor, an upper electrode of the ferroelectric capa...

21.07.2002
18 TW495973B
MANUFACTURING METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

The object of the present invention is to increase the charge capacity for data storage capacitors and reduce the current leakage. The solution is to manufacture the data storage capacitor according to the following steps: (1) forming semi-spherical silicon crystals on the surface of the polysilicon as the lower electrode; (2) conducting plasma nitridation reaction at a low temperature around 550 ...

21.07.2002
19 TW496167U
STRETCHING-TYPE EXERCISE DEVICE FOR PUSHUP
21.07.2002
20 TW496168U
SITTING-TYPE DEVICE FOR EXERCISING WAIST AND ABDOMEN
21.07.2002