An EPL replacement system and method which automatically determine whether an EPL (22) should be replaced. A data file (32) contains age data related to each EPL (22) or a component thereof, such as a battery (50). A computer (24) reads the data file and determines whether the age of any EPL (22) is greater than a predetermined threshold period, and if so, provides a visual indication on a display...

Un écoulement brut d'eaux usées est normalement introduit dans un dessableur (2) pendant des périodes de dessablage, pour y séparer un écoulement dessablé et du sable Pendant d'autres périodes, par exemple de pluie, on introduit un agent coagulant, du sable de lestage et un agent floculant, on fait circuler l'écoulement coagulé dans une zone intermédiaire (14) de maturation puis, avec sensiblement...

Ground bottom ash, a waste material derived from combustion of coal, which presents a disposal problem, replaces part of the cement in a cementitious material useful in concretes and mortars and provides compressive strengths in concretes comparable with or better than corresponding cements in which there is no replacement of cement by ground bottom ash and cements containing fly ash.

Aqueous organopolysiloxane emulsions, especially those which can be crosslinked by addition of Si-bonded hydrogen onto aliphatic multiple bond, their preparation with an emulsifier combination comprising alkylphenyl polyglycol ether and polyvinyl alcohol with a low degree of hydrolysis, and their use for preparing anti-adhesive coatings.

A flash memory improved in its erasing operation by shortening its erasing time, wherein, when data is written prior to erasing, by selecting a plurality of lines of at least either of word lines and bit lines simultaneously, data is written into a plurality of transistors in concurrence.

UN LECTOR DE TARJETAS CARACTERIZADO EN SU FORMA POR ESTAR CONSTITUIDO A PARTIR DE UN CUERPO QUE ADOPTANDO LA CONFIGURACION PLANTAR RECTANGULAR,PRESENTA UNA SUPERFICIE SUPERIOR EN LA CUAL SUS VERTICES Y ARISTAS SON ROMOS,DISPONIENDO EN LA ZONA CENTRAL DE UNA DE SUS RAMAS MENORES DE UN LIGERO REHUNDIDO CONCAVO TENIENDO SU SUPERFICIE DEFINIDA EN SEIS AREAS RECTANGULARES DE DIFERENTES TAMANOS,APARECIE...

A multi-layer lead frame for a semiconductor device includes a signal layer (12) made of a metal strip having a signal pattern including a plurality of lead lines (12a). A power supply or ground layer (14) is adhered and laminated to the signal layer (12) by means of an adhesive film (20). The adhesive film (20) is an electrically insulating connector tape having through holes extending in a thick...

The invention relates to a method of rapidly transporting a drug to the epidermis and accumulating and maintaining the drug therein for a prolonged period of time comprising administration of a therapeutically efective non-toxic amount of the drug with an effective amount of hyaluronic acid.

A thin film deposition method consists of depositing a thin film on a wafer by supplying a reactant gas molecules toward and onto the wafer within a vacuum vessel or chamber. The pressure within the vacuum vessel is set to the pressure under which the mean free path (d) of the molecules contained in the supplied reactant gas can be longer than the shortest distance (L) between the wafer and the wa...

A process for preparing trichlorosilane by reducing tetrachlorosilane in a fluidized bed reactor has the following steps: a) establishing in the reactor, a fluidized bed of silicon particles; b) heating the silicon particles to a temperature of 300.degree.C to 1100.degree.C by directing microwave radiation into the reactor; c) passing a reaction gas containing tetrachlorosilane and hydrogen throug...

New device and method are described for accurate etching and removal of thin layer by controlling the surface residence time, thickness and composition of reactant containing film. Etching of silicon dioxide at low pressure using a quartz crystal microbalance is illustrated. Usefulness of the invention in the manufacture of microelectronic devices is shown.

A method of fabricating a semiconductor substrate is characterized in that a semiconductor wafer (5) is disposed between a pair of opposite electrodes (41, 42) provided in an atmosphere of inert gas containing impurity gas which is held at a low pressure, a low-frequency alternating current (3) is applied between the electrodes (41, 42) to induce plasma, and impurity ions are implanted into the su...

The present invention relates to a method of making an electrode pattern for an amorphous silicon solar cell which has a small line width to enhance mask alignment and effective area when forming a pattern of an electrode layer. According to this invention, an electromagnet (5) is attached onto a substrate support (1), and a sample (4)'s mask (3) comes to closely contact by magnet (5)'s magnetic f...

PCT No. PCT/AU92/00314 Sec. 371 Date Mar. 15, 1994 Sec. 102(e) Date Mar. 15, 1994 PCT Filed Jun. 25, 1992 PCT Pub. No. WO93/00569 PCT Pub. Date Jan. 7, 1993An electronic fluid flowmeter includes an LSI digital device and an LSI analog device. The digital device drives a pair of acoustic transducers to transmit acoustic waves within a fluid, the flow of which is being measured. The acoustic waves a...

An antistatic film comprising a chemically adsorbed film of straight chain molecules each containing a conductive group and provided on a chargeable substrate via covalent bonds each containing a Si group, said chemically adsorbed film having a conductivity of 10<-><1><0> S/cm or above. With the antistatic chemically adsorbed film according to the invention, conductive functional groups are secure...

A quantum semiconductor device has a semiconductor substrate (30), a plurality of quantum boxes (2, 4; 6, 8; 12, 14) formed adjacent to one another in the semiconductor substrate (30), and a quantum level control unit (1) for changing the effective size of at least one (4, 8, 14) of the quantum boxes (2, 4; 6, 8), to thereby change the quantum level of each of the quantum boxes (2, 4; 6, 8). Conse...

Composition cosmétique ou dermatologique aqueuse comprenant un oligomère filmogène et des particules nanométriques rigides et non-filmifiables. De telles compositions contiennent dans un milieu aqueux cosmétiquement acceptable au moins: (A) un oligomère filmogène soluble ou dispersible dans ledit milieu, ayant un poids moléculaire mesuré par chromatographie d'exclusion stérique, inférieur ou égal ...

A method of manufacturing a semiconductor device in which a conductive layer (6) provided on a surface (4) of a semiconductor body (1) is formed with at least one opening (10). The semiconductor device may be an insulated gate field effect transistor (IGFET) in which case the opening (10) defines a hollow gate structure for the IGFET. Insulating material (16') is grown on the surface (4) to cover ...