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1 JP59228725A
BONDING DEVICE

PURPOSE:To efficiently bond an arbitrary article to be bonded by forming different markers on respective types of carrier frames, recognizing and identifying the markers, and automatically exchanging bonding information to a bonder in according with the recognized result. CONSTITUTION:In order to manage an article 17 to be bonded at the unit of a frame 15 by a marker 18 formed on a carrier frame 1...

22.12.1984
2 JP59228752A
SEMICONDUCTOR DEVICE

PURPOSE:To eliminate the influence of the variation in the potential in a substrate to the capacity of a capacitor by forming the capacitor of a polysilicon, an Si nitrided film and a metal film on the substrate. CONSTITUTION:A polysilicon film 3 is formed on a field oxidized film 2 on an Si substrate 1, and this part is connected to a leading electrode 4A. The first Si nitrided film 6 is formed o...

22.12.1984
3 JP59228739A
SEMICONDUCTOR DEVICE

PURPOSE:To prevent electrostatic damage due to direct contact with human body by containing an electrode connecting terminal from the mounting surface of a package substrate. CONSTITUTION:An electrode connecting terminal 8 is formed, for example, in a recess shape by supplying a solder material to the depth of a recess 7 on the mounting surface 6 at the lower side of a package substrate 1, and is ...

22.12.1984
4 JP59228869A
METHOD AND APPARATUS FOR PRODUCING WOOD HEAD OF GOLF CLUB
22.12.1984
5 JP59228870A
PRODUCTION OF WOOD HEAD OF GOLF CLUB
22.12.1984
6 JP59229309A
VACUUM MOLDING METHOD

PURPOSE:To contrive to increase partially developing ratio of a plastic sheet by a method in which the plastic sheet is transferred to a male mold for vacuum molding, opposing the male mold to a female mold, and then the sheet is molded with the female mold for vacuum molding. CONSTITUTION:After a plastic sheet 14 has been fixed to a blank holder 15 and heated, a male mold 11 is raised and caused ...

22.12.1984
7 IN154893A1
IMPROVEMENT IN A PROCESS FOR THE PREPARATION OF SILICON FROM QUARTZ AND CARBON IN AN ELECTRIC FURNACE

A process for producing silicon in which a reaction mixture consisting, on the one hand, of hot-pressed briquettes of silicon dioxide (quartz) and carbon and, on the other hand, of granular quartz are introduced into an electric furnace and reacted so that silicon carbide is produced from the agglomerates and the silicon carbide then reacts with the quartz which fuses from the granular quartz to p...

22.12.1984
8 IN154914A1
IMPROVEMENTS IN OR RELATING TO A PROCESS FOR THE BROMINATION OF ERGOT ALKALOIDS

A process for the production of a compound of formula I wherein R1 is carboxyl, alkoxy- (C1-5)carbonyl, amido, alkyl(C1-5)amido, di(alkyl(C1-5))amido or an amido radical of formula II wherein Ra is alkyl(C1-4), Rb is alkyl(C1-4) or benzyl, and R2 is hydrogen or alkyl(C1-4), and either R3 is hydrogen and R4 is hydrogen or alkoxy(C1-4> or R3 and R4 together are a single bond, is...

22.12.1984
9 IN154961A1
A STERILISING FITMENT FOR AN INJECTION DEVICE AND A STERILISING SUBSTANCE HOLDER FOR SUCH FITMENT

In order to minimize the risk of infection when a large number of animals are injected with the same needle, the injecting gun is provided with a stainless steel sleeve which surrounds the needle. The sleeve comprises a first tube attached to the needle connecting body and a second tube telescopically slidable within the first tube against a spring. A detachable plastics cap incorporating a steril...

22.12.1984
10 JP59043436Y2
<назва відсутня>
22.12.1984
11 JP59229363A
HEAT ACCUMULATION CORRECTING METHOD AND APPARATUS OF THERMAL HEAD

PURPOSE:To make it possible to obtain good printing quality, by variably controlling electric energy to each heat generating element by each recording pulse amplitude of a pre-scanning line, heat accumulation state information in consideration of a circumference and interval time information. CONSTITUTION:Present, previous and further-previous image informations are respectively stored in a first-...

22.12.1984
12 JP59229364A
HEAT ACCUMULATION CORRECTING METHOD AND APPARATUS OF THERMAL HEAD

PURPOSE:To make it possible to enhance printing quality, by operating a heat accumulation state by applying emphasis corresponding to the change of an interval time to heat hystory information with due regard to a circumference while controlling electric energy to each heat generating element on the basis of the operated value and previous recording pulse amplitude. CONSTITUTION:Present, previous ...

22.12.1984
13 JP59229365A
HEAT ACCUMULATION CORRECTING METHOD OF THERMAL HEAD

PURPOSE:To make it possible to always obtain good printing quality free from irregularity in density, by variably controlling electric energy to each heat generating element on the basis of previous recording pulse amplitude, the temp. of a substrate and heat accumulation state information with due regard to a circumferencial element. CONSTITUTION:Present, previous and further-previous image infor...

22.12.1984
14 FI842513A
FOERFARANDE FOER FRAMSTAELLNING AV FRUKTOSYLDISACKARIDER.

A process for preparing a fructoside, especially a fructosyl disaccharide, comprises reacting a fructosyl saccharide such as sucrose or raffinose with an alcohol or aldose in the presence of a fructosyl-transferase, especially one derived from B. subtilis NCIB 11811, 11872 or 11873. In particular, aldose is a compound of the formula (II) in which A represents a hydrogen atom or the grou...

22.12.1984
15 DK297784A
FREMGANGSMAADE TIL FREMSTILLING AF FRUCTOSYLDISACCHARIDER

A process for preparing a fructoside, especially a fructosyl disaccharide, comprises reacting a fructosyl saccharide such as sucrose or raffinose with an alcohol or aldose in the presence of a fructosyl-transferase, especially one derived from B. subtilis NCIB 11811, 11872 or 11873. In particular, aldose is a compound of the formula (II) in which A represents a hydrogen atom or the grou...

22.12.1984
16 JP59053095B
<назва відсутня>

A uniform distribution of fluorine over a fixed bed of catalyst particles is obtained by in-situ fluoriding with the use of a constant or variable fluorine slip through the catalyst bed combined or not combined with a positive temperature gradient over the bed, provided that certain given requirements with respect to the applied fluorine slip and temperature gradient are fulfilled.

22.12.1984
17 JP59228713A
MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To manufacture a semiconductor device with excellent element characteristics by a method wherein the surface side of a semiconductor film is made amorphous by an ion implantation and then recrystallized by a heat-treatment. CONSTITUTION:A single-crystal Si vapor phase deposition film 2 is formed on a sapphire alpha-Al2O3 single crystal substrate 1 by a CVD method. The surface of the film 2...

22.12.1984
18 JP59228754A
MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To improve the carrier mobility of a semiconductor device formed on an insulating single crystal substrate by converting only the surface side in an active elemeent forming region, the entire surface and a semiconductor film in a load element forming region into amorphous region, and then recrystallizing it. CONSTITUTION:A single crystal Si vapor phase grown film 2 is grown on a sapphire s...

22.12.1984
19 JP59193998U
<назва відсутня>
22.12.1984
20 JP59228989A
ELECTROLYTIC WATER PRODUCING DEVICE

PURPOSE:To surely prevent trouble in an electric system by providing a circuit to delay the time for starting conduction of electrolytic current from the time for starting admission of water at the startup in automatic control of an automatic-manual selecting circuit, current regulating circuit and the main unit of a producing device. CONSTITUTION:When the water contg. alkali ion in a water storag...

22.12.1984