The invention relates to a method and apparatus for fault detection of electric glass panes in an electric glass pane system (1, 2, 7) operated with time-switched-type of input power feed control. According to the method, the mains power feed conductor (2) of the electric window pane system (1) is adapted to pass through a transformer assembly (13) so that electric power is transferred to the magn...

In a semiconductor device module of this invention, on a metal base is formed a metal layer, on which an insulating substrate is formed. On the insulating substrate is formed conducting film patterns, to which a power device and a control device for controlling the power device are electrically connected. The metal layer exists only between the insulating substrate and the base under the power dev...

The invention provides a process for water-proofing gypsum materials which comprises adding, to a pulverulent gypsum plaster composition containing from 10 to 90% by weight of gypsum based on the total weight of the composition, a mixturo of a) from 1.0 to 15% by weight, based on the total weight of the composition, of one or more dispersion powders redispersible in water and based on vinyl acetat...

Provided is a semiconductor device comprising a semiconductor chip which is directly covered with a resin material having a light shielding property as well as a film which is provided on the resin material for shielding the semiconductor device against light. The film may be formed by a seal having a surface which is covered with a metal and a rear surface which is colored black, a layer of a met...

This invention relates to novel derivatives of N-acetyl-3-fluoro-neurminic acid derivatives (I) and preparation thereof. The compound (I) can be synthesized by reacting a solution of alkyl 5-acetamido-2,6-anhydro-4,7,8,9-tetra-O-acetyl-2,3,5-trideoxy-D-glycer o-D-galact o-2-enonate with (i) an inert gas containing fluorine or (ii) acetylhypofluorite obtained by passing the inert gas containing flu...

A semiconductor read only memory is disclosed. The memory has a memory cell array including a plurality of memory cell groups. Each of the plurality of memory cell groups includes a plurality of memory cells. The memory has select circuit for selecting an arbitrary memory cell group from among the plurality of memory cell groups, and an address storage circuit for storing address information of an...

A semiconductor device (1B) is provided with a lead frame (2) having an opening (11) at a central part thereof and a plurality of leads which are respectively made up of an inner lead (2a) and an outer lead (2b), a radiator block (3) provided under the opening (11) of the lead frame (2) and having a top surface part and a bottom part, where a gap is formed between the top surface part of the radia...

A glass substrate is coated with several dielectric layers making an anti-reflection coating (6), with alternate layers having high and low refraction indices. To protect the layer (4), which is susceptible to deterioration through contact with alkaline ions e.g. Na, at least one anti-diffusion layer is included (7).

L'invention a pour objet un substrat verrier (1) comportant sur au moins une de ses faces un revêtement anti-reflets (6) fait d'un empilement de couches minces de matériau diélectrique d'indices de réfraction alternativement forts et faibles. En vue de prévenir la modification des propriétés optiques du revêtement (6) au cas où le substrat (1) est soumis à un traitement thermique du type trempe, b...

Amorphous sodium silicate-metal sulfate composite powder having water softening power and having small hygroscopicity, and useful as a detergent builder is provided. This amorphous sodium silicate-metal sulfate composite powder is characterized in that it contains a metal sulfate, for example, sodium sulfate, as solid solution, and when the SiO2/Na2O molar ratio is expressed by n and the specific ...

PCT No. PCT/US92/04290 Sec. 371 Date Sep. 17, 1992 Sec. 102(e) Date Sep. 17, 1992 PCT Filed May 21, 1992 PCT Pub. No. WO92/20843 PCT Pub. Date Nov. 26, 1992.A nozzle assembly for forming hollow fibers, particularly a "Z-fiber" having longitudinally oriented trabeculae with the fiber wall, is provided. The nozzle assembly contains a replaceable nozzle cap, a replaceable seal-guide, and a retractabl...

WDM optical fiber communications entails bidirectional transmission with at least two WDM channels in opposite transmission directions in a single fiber. As compared with unidirectional transmission, a number of capacity-limiting considerations are relaxed. Operation using in-ground dispersion-shifted fiber permits system capacities of conventional unidirectional WDM.

The assembly consists of a series of tubes contained in a shell in which they extend radially in a plane perpendicular to their axes in a number of spurs (6; 10-18), some of which (6; 10-13) are branched (8,9) and have their inner ends connected to a tube surface (22) which is more or less ring-shaped. The branching tubes have trunks (7) at their bases which diverge and then branch into two sectio...

An apparatus and method for correcting printing characteristics of a full-line printhead, and producing a high-printing quality printhead at high manufacturing yield, a corrected printhead by this apparatus, and a printer employing this printhead. According to this method, an image is printed on a printing medium by using double pulses obtained based on fluctuation of resistance of each printing u...

a rectangular first polycrystal silicon layer(9) contacted to a silicon substrate(1); a rectangular second polycrystal silicon(11) separated from the first polycrystal silicon(9); a rectangular third polycrystal silicon(15) connected to the first polycrystalline silicon(9) electrically through a groove formed on the second polycrystal silicon(11); a capacitor dielectric film(17) and a plate(18) fo...

The DRAM cell has the feature that an oxide layer(9) formed by oxidizing a plate electrode(6) on a drain region(10') is close to a bit line(8) connected to the drain region(10'). The DRAM cell reduces the distance between the storage electrodes by forming the above oxide film(9). The method enables to form the DRAM cell with a few process.

The method of manufacturing capacitor of DRAM cell comprises the steps of : depositing a polysilicon layer(8) for a storage electrode on a first insulating layer(6), a second insulating layer(7), and forming a third insulating layer(9) and a polysilicon layer(10); forming a third insulating layer pattern(9A) and a number of perpendicular pillars; depositing a forth insulating layer(11), and formin...

The method of forming capacitor of semiconductor device comprises the steps of : forming a field oxide film(2), a gate oxide film(3), a gate electrode(4), a word line(4') and a MOSFET with active regions(6,6') of LDD structure using a spacer oxide film(5); forming a doped charge storage electrode polysilicone film(11) after forming a polysilicone spacer(10) and a contact hole on the active region(...

A conductive adhesive such as gold paste is coated and solidified on a lead provided on a frame for manufacture. Wire bonding between a semiconductor chip bonded to the frame and the lead provided thereon is effected between the semiconductor chip and a conductive adhesive layer solidified on the lead. It is thus possible to dispense with a conventional step of plating the frame (with gold) for ef...