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| № п/п |
Номер патенту |
Назва винаходу та фрагмент реферату | Дата публікації патента |
|---|---|---|---|
| 1 | JP2002313814A |
SILICON CARBIDE SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
PROBLEM TO BE SOLVED: To realize good operation of a silicon carbide semiconductor device by preventing a leakage current from being generated between a gate region and a channel region. SOLUTION: The device has a high resistance layer 6b which is formed by ion implantation of V(vanadium) between a second gate region 6 and a channel layer 4. According to this constitution, it is possible to preven... |
25.10.2002 |
| 2 | JP2002313947A |
SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To contain a reversely connected protective circuit that can be manufactured inexpensively through a CMOS manufacturing process and a surge- resistant protective circuit in an IC chip. SOLUTION: A region 3 which becomes the lowest in impedance in a circuit when a Vcc pad 1 to which a power supply voltage is supplied and a GND pad 2 to which a ground potential is supplied are ... |
25.10.2002 |
| 3 | JP2002313966A |
TRANSISTOR TYPE FERROELECTRIC NON-VOLATILE STORAGE ELEMENT AND ITS MANUFACTURING METHOD
PROBLEM TO BE SOLVED: To improve integration, and at the same time, to improve reliability in a ferroelectric transistor having MFMIS (conductor films-ferroelectric films- conductor films-insulating films-semiconductors) structure. SOLUTION: In a gate insulator capacitor made of MIS structure, a low permittivity layer inhibition layer 2 is interposed between the insulating film 3 made of a materia... |
25.10.2002 |
| 4 | JP2002314047A |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method which comprises a protecting film to sufficiently prevent H2 diffusion while preventing degradation of film quality of a capacity insulating film under a mutual reaction, or the like, for higher reliability, related to a capacitor in which an insulating film comprising a metal oxide is used as a capacity insulatin... |
25.10.2002 |
| 5 | JP2002314071A |
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To suppress surface roughening and abnormal composition ratio of SiC due to heat treatment for impurity activation. SOLUTION: Before or after implanting p-type impurity ions for forming a source region 4 and a drain region 5 in an n<-> type epitaxial layer 2, a silicon oxide film 6 is formed on the n<-> type epitaxial layer 2 as a cap layer. Heat treatment for activation is p... |
25.10.2002 |
| 6 | JP2002314099A |
SCHOTTKY DIODE AND ITS MANUFACTURING METHOD
PROBLEM TO BE SOLVED: To lower ON resistance without lowering a field relaxing effect in the reverse direction and to reduce the loss by reducing an ON voltage in the forward direction. SOLUTION: A plurality of p-type diffusion layers 3 are formed on the surface layer of an n<-> -type epitaxial layer 2. The p-type diffusion layers 3 is arranged such that a lower region 3b is wider than an upper re... |
25.10.2002 |
| 7 | JP2002314267A |
HINGE FORMING METHOD FOR FLEXIBLE SUBSTRATE AND DEVICE THEREOF
PROBLEM TO BE SOLVED: To surely form a coil-shaped hinge on a flexible substrate without skill. SOLUTION: A retainer 11 is rotatable in a horizontal direction by using one point P1 of a reference line L1 as a shaft, and retains a key substrate 1 in such a manner that a first end portion 3A of the flexible substrate 3 is shifted from the reference line L1. A retainer 12 is rotatable by using the re... |
25.10.2002 |
| 8 | JP2002315285A |
BRUSHLESS ALTERNATOR
PROBLEM TO BE SOLVED: To provide a brushless alternator having a rotor structure capable of contributing to conversion to miniaturization and a high power output and cost reduction. SOLUTION: A first rotor core 8A and a second rotor core 8B are formed by laminating a sheet core 81 formed of a plurality of protruding-shaped magnetic pole pieces 81a on the outer periphery of a ring-shaped magnetic b... |
25.10.2002 |
| 9 | JP2002315305A |
SWITCHING MOS-FET DRIVE CIRCUIT
PROBLEM TO BE SOLVED: To provide a switching MOS-FET drive circuit of a multi-drive system that enables low-impedance discharging and that is miniaturized and is made light-weight. SOLUTION: A discharging transistor Q5 of low impedanc, which is turned on, when a negative voltage is outputted at the secondary side of pulse transformers T1, T2, is provided commonly at the secondary side of the two p... |
25.10.2002 |
| 10 | JP2002315375A |
MOTOR CONTROLLER
PROBLEM TO BE SOLVED: To simultaneously cancel torque ripples generated in a motor by simultaneously compensating for harmonic current elements of 6f and 24f, because a plurality of harmonic currents exist together with the current element of basic frequency in a motor controller. SOLUTION: The motor controller comprises a rotation measuring section 4, current measuring part 5, upper control unit ... |
25.10.2002 |
| 11 | FR2823675A1 |
BIOMATERIAL, USEFUL IN LOCAL THERAPY OR TISSUE RECONSTRUCTION, COMPRISES CORE COVERED WITH ALTERNATE LAYERS OF POLYELECTROLYTES OF OPPOSITE CHARGE INCLUDING FIXED ACTIVE AGENT;BIOMATERIAUX AVEC RECOUVREMENTS BIOACTIFS
Biomaterial (I), comprises a core covered with alternate layers of polyelectrolytes of opposite charges, with one or more biologically active molecules (A) of molecular weight below 10000 Daltons fixed to one or more polyelectrolyte layers.; L'invention vise des biomatériaux comportant un noyau recouvert de couches alternées de polyélectrolytes de charges opposées, caractérisés en ce qu'ils com... |
25.10.2002 |
| 12 | FR2823911A1 |
SOCKET OUTLET FOR TWO OR THREE PIN PLUGS, HAS GUIDE AND RETAINING UNIT TO MOUNT SECONDARY FLAP ON PRIMARY FLAP SO THAT IT CAN PIVOT ABOUT RESPECTIVE AXIS;SOCLE DE PRISE DE COURANT POUR FICHE COMPLEMENTAIRE A DEUX OU TROIS BROCHES, EQUIPE D'UN OBTURATEUR DE SECURITE A DEUX VOLETS
A return spring (37) urge the primary and secondary flaps (23,24) at all times towards their rest position. Each flap has guide and retaining unit (33-36,41,42) which serves to mount the flap (24) on the flap (23) so that it can pivot about an axis parallel to a plane common to all the openings in a front cover. An Independent claim is included for front cover for socket outlet.; Il s'agit d'u... |
25.10.2002 |
| 13 | CA2344960A1 |
A WORK TABLE HAVING TOOL COUNTERBALANCING MEANS;TABLE DE TRAVAIL MUNIE D'UN DISPOSITIF D'EQUILIBRAGE D'OUTIL
The present invention provides a work table for use with a tool, comprising an inclined work surface, which is substantially planar and is supported by a frame having a base; a gantry movably attached to the work surface and having two ends, a longitudinal axi s and extending within a plane parallel to the work surface; a movable tool mount slidably attached to the gantry for removable attachment ... |
25.10.2002 |
| 14 | ZA200106115A |
IMPROVED MICROBIAL PREPARATIONS.
Microbial preparations having increased growth/yield potential, or increased survival/recovery rate in a product, the preparation comprising microbes grown or cultured in media based on or containing resistant starch; processes for producing the microbial preparations; and products containing the microbial preparations. |
25.10.2002 |
| 15 | LT4959B |
STABLE LIQUID FORMULATIONS OF BOTULINUM TOXIN;STABILIOS SKYSTOS BOTULINO TOKSINO KOMPOZICIJOS
Šis išradimas apima skystas botulino toksino kompozicijas, kurios yra stabilios laikant skystoje formoje standartinio šaldytuvo temperatūrosemažiausiai 1-2 metus, o laikant aukštesnėse temperatūrose - mažiausiai 6 mėnesius. Išradimas taip ar apima tokių kompozicijų panaudojimą vaistų įvairiems terapiniams ir kosmetiniams tikslams gamyboje.ą; The invention includes liquid formulations of botulinum ... |
25.10.2002 |
| 16 | JP2002314200A |
SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURING METHOD
PROBLEM TO BE SOLVED: To provide a semiconductor laser device which is formed on a ridge substrate manufactured by an epitaxial growth method, has no current leak and exhibits a high optical power efficiency with respect to the injection current. SOLUTION: The semiconductor laser device 60 of SDH type is provided with a GaAs base multilayer structure which is the same as a conventional one on a p-... |
25.10.2002 |
| 17 | JP2002314241A |
ELECTRONIC DEVICE
PROBLEM TO BE SOLVED: To provide an electronic device by an entirely novel solder connection, specifically, to realize a flip chip connection on a high temperature side in a temperature layering connection as an alternating method of a high Pb solder containing much Pb. SOLUTION: The arrangement is made by coupling a metal ball containing a unit metal, an alloy, a compound, or their mixture in eit... |
25.10.2002 |
| 18 | JP2002314257A |
MULTILAYER CIRCUIT BOARD, METHOD OF MANUFACTURING THE SAME, AND ELECTRIC ASSEMBLY
PROBLEM TO BE SOLVED: To provide an improved multilayer circuit board and a method for manufacturing the board. SOLUTION: A multilayer board precursor 31 is formed with use of a build-up process. The precursor 31 includes inner conductive posts 16 and 19, an inner conductive layer 10 coupled with an end of one of the conductive posts, and a dielectric layer 12 disposed around the conductive posts.... |
25.10.2002 |
| 19 | JP2002314370A |
BALANCED SURFACE ACOUSTIC WAVE FILTER
PROBLEM TO BE SOLVED: To obtain a balanced surface acoustic wave filter in which a phase difference error and an amplitude difference error between a pair of balanced terminals are decreased. SOLUTION: In this balanced surface acoustic wave filter obtained by cascading two sets of primary-third vertically coupled double-mode SAW(surface acoustic wave) filters formed on a piezoelectric board, the n... |
25.10.2002 |
| 20 | JP2002314425A |
DELTA-SIGMA MODULATING APPARATUS AND METHOD, AND DIGITAL SIGNAL PROCESSING APPARATUS AND METHOD
PROBLEM TO BE SOLVED: To provide a delta-sigma modulating apparatus and method that suppresses distortion depending on the input signal and generates a 1-bit digital signal obtained by applying delta-sigma modulating only to a desired signal component. SOLUTION: An integrator 2 applies integration processing to a signal B on the basis of an input signal, that is the signal B obtained by adding a f... |
25.10.2002 |