A glassware forming machine is shown which has a baffle support arm. The baffle support arm provides for four individual baffle holders which are grouped in adjacent pairs. The pairs of holders are interconnected by an equalizer arm and are biased into position by a leaf spring above and by a coil spring below. The equalizer arms are connected intermediate their lengths to a third larger equalizer...

A silicon carbide-graphite composite material is disclosed. The composite material includes graphite as a secondary phase which is segregated along the grain boundaries of all the silicon carbide grains. The graphite has an average grain size of not more than 3 mu m and is present in a proportion of 1 to 20 vol % based on the volume of the silicon carbide. The composite material has a density gre...

The invention relates to new hydroxybenzenesulfonic acid salts of 5-(o-chlorobenzyl)-4,5,6,7-tetrahydrothieno [3,2-c] pyridine, to the preparation method thereof and to the pharmaceutical compositions containing them. The new hydroxybenzenesulfonic acid salts of 5-(o-chlorobenzyl)-4,5,6,7-tetrahydrothieno [3,2-c] pyridine are endowed with platelet aggregation inhibiting activity, with angioprotect...

ELLE A POUR OBJET UN PROCEDE POUR LA MESURE DE LA DISTANCE D'UN DEFAUT D'ISOLEMENT SURVENANT SUR UNE LIGNE ELECTRIQUE PROTEGEE PAR UN DISJONCTEUR CARACTERISE EN CE QUE L'ON MESURE, APRES L'OUVERTURE DU DISJONCTEUR, LA PSEUDO-PERIODE DU COURANT OU DE LA TENSION DE LA LIGNE, LA MESURE DE CETTE PSEUDO-PERIODE ETANT PROPORTIONNELLE A LA MESURE DE LADITE DISTANCE.

APPLICATION A LA MESURE DE LA...

PURPOSE:To bring the density of carrier electrons to 10<1>9cm<-3> or thereabout and to enable to increase a current and to reduce a resistance value and the like by a method wherein silicon is atomic plane-doped on a gallium arsenide or aluminum-gallium semiconductor layer under the specific condition. CONSTITUTION:Si is doped on a GaAs or AlGaAs semiconductor layer by performing an atomic plane-d...

PURPOSE:To prevent the deterioration in characteristics of an element by a method wherein, after the introduction of As<+> of low concentration from a gate end, a side wall is formed on the lateral side of a gate electrode, and then P<+> of low concentration and As<+> of high concentration are introduced from the end of this side wall to form a source/drain as a countermeasure to hot electrons. CO...