The invention relates to central venous polyurethane catheters with a thin hydrophilic coating loaded with a lipodalbaheptide antibiotic and the method for their preparation. Lipodalbaheptide antibiotics particularly suitable for the preparation of the above mentioned central venous catheters are selected from teicoplanin, its functional derivatives at the C-63 carboxy group, antibiotic A 40926, a...

A multi-layer press fabric for the wet press of a paper machine has a capillary and/or adhesive water store (10) which is integrated into the fabric at a distance from both the contact surface for the web to be dehydrated and from the machine running side.

A multilayered press screen for wet presses of a paper machine exhibits a capillary and/or adhesive water reservoir that is integrated into the cloth at a distance from both the contact surface for the web to be dewatered and from the machine running side.

of the disclosure: Azaquinoxalines, processes for their preparation and their use Compounds of the formula I (I) and their tautomeric form of the formula Ia (Ia) in which the substituents R1 to R5 and V, W, Y and Z have the stated meanings, display an effect against viruses.

Aqueous, dispersant-containing wax- and polysiloxane-dispersions (P) containing as wax (A) at least one cationically modified hydrocarbon wax and optionally (B) at least one non-oxidized hydrocarbon wax, as polydiorganosiloxane (C) at least one optionally amino-modified or/and non-ionically modified polydiorganosiloxane and as dispersant (D) a non-ionogenic, cationic or amphoteric dispersant s...

A device is provided for continuously winding webs of fabric wherein one end of each of two winding shafts is connected permanently and force-lockingly to a respective rotary drive. The drive is connected permanently and force-lockingly to the elements of an automatic guide, which is attached to a single turning disk or plate which is held by the device on the drive side of the device. The shafts ...

A method for manufacturing an MOS semiconductor device, wherein the oxidation process of a silicide is included, comprises the steps of: forming a polycide structure on a semiconductor substrate (21) by forming a gate insulating layer (22), a conductive layer containing silicon (23), and a silicide layer (24) in order; and forming a silicon oxide (25) on the whole surface of the resultant structur...